CdZnTe衬底的退火改性技术研究  

Study on annealing modification technology of CdZnTe substrate

作　　者：范叶霞[1] 周振奇 刘江高 李振兴 侯晓敏[1] 折伟林[1] 王丛[1] FAN Ye-xia;ZHOU Zhen-qi;LIU Jiang-gao;LI Zhen-xing;HOU Xiao-min;SHE Wei-lin;WANG Cong(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2023年第1期79-83,共5页Laser & Infrared

摘　　要：针对高性能碲镉汞红外探测器对碲锌镉(CdZnTe)衬底质量需求的不断提升,采用高温-真空退火方式,对碲锌镉衬底进行退火改性研究。结果发现:碲锌镉衬底的红外透过率得到明显地改善,在红外波段(2.5~25μm)均达到60%以上;晶片中的第二相夹杂得到极大地改善,可实现无大于1μm的第二相夹杂,即可实现红外显微镜下夹杂不可见;Zn组分分布均匀性得到极大地改善,通过退火分压的调节,可实现衬底中Zn组分可调和Zn值的组分均匀分布,其中Zn组分可控制在0.044~0.051范围内,成分标准偏差可控制在0.001以下,衬底的组分可控和均匀分布为大面阵碲镉汞红外探测器的质量提升奠定了坚实的材料基础。In view of the increasing demand of high-performance HgCdTe detector for the good quality CdZnTe substrate, the annealing modification of CdZnTe substrate is studied by high-temperature vacuum annealing technology. The results show that the infrared transmittance of CdZnTe substrate is significantly improved, reaching over ≥60 % in the infrared band at 2.5μm~25μm.The second phase inclusion in the wafer are greatly improved and no second phase inclusion(>1 μm) can be realized which means that the inclusions are not visible under infrared microscopy. The uniformity of the Zn component distribution is greatly improved, and by adjusting annealing partial pressure, the Zn components in the substrate can be adjusted and the component uniformity of the Zn value can be achieved, where the Zn component can be controlled in the range of 0.044~0.051 and the standard deviation of the composition can be controlled below 0.001. The component adjustable and uniformity of the substrate lays the substrate material foundation for improving the quality of large area array HgCdTe detector.

关 键 词：碲锌镉(CdZnTe) 退火技术 性能改进 第二相夹杂 Zn组分 

分 类 号：TN213[电子电信—物理电子学]