导模法生长的β-Ga_(2)O_(3)单晶的位错腐蚀坑显露面  

Facets of Dislocation Etch Pits of β-Ga_(2)O_(3) Single Crystal Grown by Edge-Defined Film-Fed Growth Method

作　　者：张胜男 王健[1] 霍晓青[1] 王英民 周金杰 程红娟[1] Zhang Shengnan;Wang Jian;Huo Xiaoqing;Wang Yingmin;Zhou Jinjie;Cheng Hongjuan(The 46^(th)Research Institute,CETC,Tianjin 300220,China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《半导体技术》2022年第12期956-959,971,共5页Semiconductor Technology

摘　　要：β-Ga_(2)O_(3)单晶作为高压大功率器件的衬底,其位错密度直接影响器件的漏电特性,位错腐蚀坑显露面与外延生长密切相关。β-Ga_(2)O_(3)单晶属于单斜晶系,对称性低,研究不同晶面位错腐蚀坑的形状与显露面难度较高。对采用导模(EFG)法生长的(001)、(201)和(010)面β-Ga_(2)O_(3)晶片进行腐蚀,采用扫描电子显微镜(SEM)观测腐蚀坑形貌,采用共聚焦激光扫描显微镜对显露面与表面晶面之间的夹角进行表征,根据测试结果可推算出腐蚀坑显露面晶面指数,为衬底和外延生长提供重要的参考依据。β-Ga_(2)O_(3)single crystal is used as the substrate of high-voltage and high-power devices.The dislocation density directly affects the leakage performance.The facets of dislocation etch pits are closely related to the epitaxial growth.β-Ga_(2)O_(3)single crystal belongs to monoclinic system with a low symmetry.It is difficult to study the shape and facets of dislocation etch pits for different crystal planes.The(001),(201)and(010)β-Ga_(2)O_(3)wafers grown by edge-defined film-fed growth(EFG)method were etched.The morphologies of etch pits were observed by scanning electron microscope(SEM).The included angles between facets and surface crystal planes were characterized by confocal laser scanning microscope.According to testing results,crystal plane indices of these facets of each etch pit were inferred,providing an important reference for the growth of substrates and epitaxial layers.

关 键 词：β-Ga_(2)O_(3)单晶 位错 腐蚀坑 显露面 表面能 

分 类 号：TN304.21[电子电信—物理电子学] TN307