同面电极砷化镓光导开关的导通特性  

Switching Transient Characteristics of GaAs Photoconductive Semiconductor Switch with Co-Planar Electrodes

作　　者：刘英洲 韦金红 王郎宁 李嵩 冯进军[1] Liu Yingzhou;Wei Jinhong;Wang Langning;Li Song;Feng Jinjun(Vacuum Electronic National Laboratory,The 12"Research Institute,CETC,Beijing 100015,China;College of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,China)

机构地区：[1]中国电子科技集团公司第十二研究所微波电真空器件国家级重点实验室,北京100015 [2]国防科技大学前沿交叉学科学院,长沙410073

出　　处：《半导体技术》2023年第1期10-17,共8页Semiconductor Technology

摘　　要：砷化镓光导开关(GaAs PCSS)作为固态脉冲功率器件,具有可承载高电压、超快速导通、在高重复频率下稳定工作等特点。基于多雪崩电离畴理论,建立了同面电极GaAs PCSS的二维数值计算模型,分析了GaAs PCSS的瞬态导通特性和延迟击穿特性。仿真结果表明,载流子浓度的增加与雪崩电离畴的形成和演化之间存在正反馈环路,促使GaAs PCSS超快速导通;雪崩电离畴的形成和演化会影响PCSS的延迟击穿特性。偏置电压、光照强度、PCSS长度和触发位置均会影响PCSS的延迟时间和导通时间。该结论对GaAs PCSS设计及开展相关实验研究具有参考意义。As a solid-state pulsed power device, GaAs photoconductive semiconductor switch(PCSS) has the advantages of high power, ultra-fast switching and stable operation at high repetition frequencies.Based on the theory of multiple avalanche ionization domains, a two-dimensional numerical model of GaAs PCSS with co-planar electrodes was established, and the transient switching and delayed breakdown characteristics of the GaAs PCSS were analyzed.The simulation results show that a positive feedback loop exists between the increase of the carrier concentration and the formation and evolution of avalanche ionization domains, which drives the ultra-fast conduction of the GaAs PCSS.The formation and evolution of avalanche ionization domains affect the delayed breakdown characteristic of the PCSS.The bias voltage, illumination intensity, PCSS length and trigger position all affect the delay time and switching time of the PCSS.The conclusion has reference significance for GaAs PCSS design and related experimental research.

关 键 词：砷化镓(GaAs) 光导开关(PCSS) 同面电极 雪崩电离畴 超快速导通 

分 类 号：TN36[电子电信—物理电子学]