基于GaAs PHEMT工艺的超宽带多通道开关滤波器组MMIC  

An Ultra-Wideband Multi-Channel Switching Filter Bank MMIC Based on GaAs PHEMT Technology

作　　者：王胜福[1] 王洋 李丽[1] 于江涛 张仕强 李宏军[1] Wang Shengfu;Wang Yang;Li Li;Yu Jiangtao;Zhang Shiqiang;Li Hongjun(The 13th Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2023年第1期48-53,共6页Semiconductor Technology

摘　　要：基于0.25μm GaAs赝配高电子迁移率晶体管(PHEMT)工艺,研制了一款超宽带7路开关滤波器组单片微波集成电路(MMIC)芯片。芯片内集成了开关、驱动电路和带通滤波器,实现了开关滤波功能。开关采用反射式串-并联混合结构;译码器和驱动电路控制某一支路开关的导通或关断;带通滤波器由集总电感和电容组成。该开关滤波器组芯片通带频率覆盖0.8~18 GHz。探针测试结果表明,开关滤波器组芯片各个支路的中心插入损耗均小于8.5 dB,通带内回波损耗小于10 dB,典型带外衰减大于40 dB。为后续研发尺寸更小、性能更优的开关滤波器组提供了参考。Based on 0.25μm GaAs pseudomorphic high electron mobility transistor(PHEMT)technology,an ultra-wideband 7-channel switching filter bank monolithic microwave integrated circuit(MMIC)chip was designed.The switches,driver circuits and band-pass filters were integrated inside the chip to realize the function of switching filtering.Reflective series-shunt hybrid structure were adopted to design the switches.The on or off of a switch branch was controlled by decoder and driver.The band-pass filters were composed of lumped inductance and capacitance.The pass band of the switching filter bank chip covers 0.8-18 GHz.The probe test results show that the insertion loss at center frequency of each channel is less than 8.5 dB,the in-band return loss is less than 10 dB,the typical out-of-band attenuation is greater than 40 dB.It provides reference for further research and development of switching filter banks with smaller size and better performance.

关 键 词：GaAs赝配高电子迁移率晶体管(PHEMT) 超宽带 多通道滤波器 带通滤波器 开关滤波器组 单片微波集成电路(MMIC) 

分 类 号：TN713[电子电信—电路与系统]