Molecular-beam epitaxy-grown HgCdTe infrared detector:Material physics, structure design, and device fabrication  

作　　者：Xiaohui Wang Mengbo Wang Yulong Liao Huaiwu Zhang Baohui Zhang Tianlong Wen Jiabao Yi Liang Qiao 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 611731,China [2]Yangtze Delta Region Institute(Huzhou),University of Electronic Science and Technology of China,Huzhou 313001,China [3]Kunming Institute of Physics,Kunming 650223,China [4]Global Innovative Centre for Advanced Nanomaterials,School of Engineering,The University of Newcastle,Callaghan NSW 2308,Australia [5]School of Physics,University of Electronic Science and Technology of China,Chengdu 611731,China

出　　处：《Science China(Physics,Mechanics & Astronomy)》2023年第3期32-57,共26页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.52072059,12274061,11774044,and 61971094);the Natural Science Foundation of Sichuan(Grant Nos.2022NSFSC0870,and2022NSFSC0485);the Foundation of Sichuan Excellent Young Talents(Grant No.2021JDJQ0015);the Fundamental Research Funds for the Central Universities(Grant No.ZYGX2020J023)。

摘　　要：Infrared(IR) detectors have important applications in numerous civil and military sectors. Hg Cd Te is one of the most important materials for IR detector manufacture. This review systematically discusses the progress of Hg Cd Te materials grown via molecular-beam epitaxy(MBE) for IR detection in terms of material physics, structure design, and fabrication. The material physics of Hg Cd Te includes crystal information, band structure, and electrical and optical properties. The characterization methods of the As-grown Hg Cd Te materials are also summarized. Then, four design structures of Hg Cd Te for IR detectors, with multilayer, superlattice, double-layer heterojunction, and barrier properties, which significantly improve the device performance,are discussed. The third section summarizes the studies on Hg Cd Te MBE-grown on different substrates, including Cd Zn Te, Si,and Ga Sb, in recent decades. This review discusses the factors influencing the growth of the Hg Cd Te film and their relationships and optimal conditions. Finally, we present the prospects and challenges associated with the fabrication and applications of Hg Cd Te materials for IR detectors.

关 键 词：HGCDTE infrared detector MBE etch pit density 

分 类 号：TN215[电子电信—物理电子学]