抑制SiC MOSFET桥臂串扰与栅源电压振荡的推挽式电容辅助电路分析及参数设计方法  

Analysis and Parameters Design Method of Push-pull Capacitor Auxiliary Circuit to Suppress SiC MOSFET Bridge-leg Crosstalk and Gate-source Voltage Oscillation

作　　者：李小强[1] 林铭恩 王文杰 吴富强 贺生鹏 LI Xiaoqiang;LIN Ming’en;WANG Wenjie;WU Fuqiang;HE Shengpeng(School of Electrical Engineering,China University of Mining and Technology,Xuzhou 221116,China;Lianyungang Power Supply Branch,State Grid Jiangsu Electric Power Co.,Ltd.,Lianyungang 222000,China;Monolithic Power Systems,Inc.,Hangzhou 310012,China)

机构地区：[1]中国矿业大学电气工程学院,徐州221116 [2]国网江苏省电力有限公司连云港供电分公司,连云港222000 [3]杭州茂力半导体技术有限公司,杭州310012

出　　处：《高电压技术》2023年第1期226-237,共12页High Voltage Engineering

基　　金：国家自然科学基金(51807196);中国博士后科学基金(2019M661983)。

摘　　要：碳化硅金属-氧化物半导体场效应晶体管(SiC metal-oxide-semiconductor field-effect transistor, SiC MOSFET)在高速开关中引起的桥臂串扰和栅极电压振荡严重制约了其开关速度。针对已提出的基于推挽式电容辅助电路(push-pull-capacitor auxiliary circuit, PPCAC)的SiC MOSFET驱动工作过程进行了进一步的分析。结合分析,将SiC MOSFET桥臂串扰以及漏源电压振荡引起的栅源电压振荡2个问题归一化,通过推挽电容充放电时刻以及桥臂串扰约束,提出了一种推挽电容参数设计方法。通过该设计方法,可使得PPCAC在抑制SiC MOSFET桥臂串扰与栅源电压振荡的基础上,改善其开通关断速度。实验结果验证了所提出设计的有效性。The bridge-leg crosstalk and gate-source voltage oscillation in high speed switching seriously restricts the switching speed of SiC MOSFET. In this paper, the driving process of SiC MOSFET based on push-pull capacitor auxiliary circuit(PPCAC) is further analyzed. Combining with the analysis, the bridge-leg crosstalk and gate-source voltage oscillation caused by drain-source voltage oscillation of SiC MOSFET are normalized. By constraining the charging and discharging time of push-pull capacitor and the bridge-leg crosstalk, this paper proposes a design method of push-pull capacitances. Through this design method, PPCAC driver can improve its turn-on and turn off speed of SiC MOSFET on the basis of suppressing the bridge-leg crosstalk and gate-source voltage oscillation. The experimental results verify the effectiveness of the proposed design.

关 键 词：SiC MOSFET 桥臂串扰 栅源电压振荡 推挽式电容辅助电路 开关速度 

分 类 号：TN386[电子电信—物理电子学]