在位势能对Haldane模型能带的影响及其拓扑电路的实现  

Influence of On-Site Potential Energy on Bands of Haldane Model and Implementation of Its Topoelectrical Circuit

作　　者：朱德军 杭志宏 Zhu Dejun;Hang Zhihong(School of Physical Science and Technology,Soochow University,Suzhou 215006,Jiangsu,China;Collaborative Innovation Center of Suzhou Nano Science and Technology,Suzhou 215006,Jiangsu,China;Institute for Advanced Study of Soochow University,Suzhou 215006,Jiangsu,China;Jiangsu Provincial Key Lab of Thin Films,Suzhou 215006,Jiangsu,China)

机构地区：[1]苏州大学物理科学与技术学院,江苏苏州215006 [2]苏州纳米科技协同创新中心,江苏苏州215006 [3]苏州大学高等研究院,江苏苏州215006 [4]江苏省薄膜材料重点实验室,江苏苏州215006

出　　处：《光学学报》2022年第21期74-80,共7页Acta Optica Sinica

基　　金：国家自然科学基金(11874274)。

摘　　要：以Haldane模型为研究体系,扩展了拓扑电路对相互作用调制的研究,设计并构建了调制紧束缚模型在位势能的一般方法。通过改变Haldane模型的在位势能,包括改变整体在位势能、对蜂窝晶格两原子施加不同在位势能,以及调整边界原子在位势能等,特别是构建相应的电路实验设计方案,实现了对界面态的调制,为进一步调控和利用界面态提供了新的思路。Taking the Haldane model as the research system,we extend the current study of topoelectrical circuits modulating interactions and design and construct a general method to modulate the onsite potential energy of the tightbinding model.In this method,efforts are made to achieve the interface state modulation,including changes in the onsite potential energy of the Haldane model,which involves the change in overall onsite potential energy,the application of different onsite potential energies on the two atoms of the honeycomb lattice,and the adjustment to the onsite potential energy of boundary atoms,and in particular,the development of the corresponding design scheme for circuit experiments.The method provides a new idea for further control and utilization of interface states.

关 键 词：物理光学 Haldane模型 在位势能 光子晶体类比 拓扑电路 

分 类 号：O436[机械工程—光学工程]