(1011)面InGaN量子阱中的静电场反转对蓝光发光二极管光电性能的影响  

Effect of Electrostatic Field Inversion in(1011)-Plane InGaN Quantum Wells on Photoelectric Properties of Blue Light-Emitting Diodes

作　　者：尹瑞梅 贾伟[1,2] 董海亮 贾志刚[1] 李天保 余春燕[1] 张竹霞[1] 许并社[1,2,3] Yin Ruimei;Jia Wei;Dong Hailiang;Jia Zhigang;Li Tianbao;Yu Chunyan;Zhang Zhuxia;Xu Bingshe(Key Laboratory of Interface Science and Engineering in Advanced Materials,Ministry of Education,Taiyuan University of Technology,Taiyuan 030024,Shanxi,China;ShanxiZheda Institute of Advanced Materials and Chemical Engineering,Taiyuan 030032,Shanxi,China;Institute of Atomic and Molecular Science,Shaanxi University of Science&Technology,Xi′an 710021,Shaanxi,China)

机构地区：[1]太原理工大学新材料界面科学与工程教育部重点实验室,山西太原030024 [2]山西浙大新材料与化工研究院,山西太原030032 [3]陕西科技大学材料原子和分子科学研究所,陕西西安710021

出　　处：《光学学报》2022年第21期204-212,共9页Acta Optica Sinica

基　　金：国家自然科学基金(61604104,21972103,61904120);山西省自然科学基金(201901D111109);山西省重点研发项目(201903D111009);山西浙大新材料与化工研究院(2021SXAT002)。

摘　　要：通过InGaN/GaN单量子阱模型研究了极化强度随晶面取向的变化,结果显示半极性(1011)面量子阱中的极化电场反转导致其能带向上弯曲,电子波函数靠近n侧,这有望抑制电子泄漏。对(1011)面InGaN/GaN多量子阱蓝光发光二极管(LED)外延结构的模拟表明半极性(1011)面提高了量子垒的有效阻挡势垒,抑制了电子泄漏。此外,(1011)面极大地降低了空穴注入势垒,实现了载流子的均衡分布,降低了俄歇复合概率,最终在电流密度为300 A/cm^(2)时,与(0001)面42%的效率骤降相比,(1011)面GaN基LED的效率骤降低至9%,发光强度提高48%。(1011)面InGaN量子阱的静电场反转特性是其具有优异光电性能的一个重要原因。In this paper,polarization intensity as a function of crystallographic orientation is studied by the InGaN/GaN single quantum well model.The results reveal that the polarization electric field inversion in the semipolar(1011)quantum well leads to upward bending of the energy band,and the electron wave function in the quantum well is close to the nside,which is likely to successfully suppress electron leakage.The simulation of the epitaxial structure of(1011)-plane InGaN/GaN multiquantumwell blue lightemitting diodes(LEDs)demonstrates that LEDs grown on the semipolar(10-11)plane can elevate the effective blocking barrier of the quantum barrier and suppress electron leakage.Moreover,the(1011)plane greatly reduces the hole injection barrier,promotes the even distribution of carriers,and reduces Auger recombination probability.Finally,the efficiency droop in(1011)-plane GaNbased LEDs is drastically reduced to 9%at the current density of 300 A/cm2 compared with 42%efficiency droop in the(0001)plane,and electroluminescence intensity is increased by 48%.The electrostatic field inversion of the(1011)-plane InGaN quantum well is an important reason for its excellent photoelectric properties.

关 键 词：光电子学 发光二极管 (1011) 静电场反转 载流子浓度匹配 效率骤降 电子泄漏 

分 类 号：TN303[电子电信—物理电子学] TN312.8