基于1,2-二氰基苯/聚合物复合材料的高耐久性有机阻变存储器  

High endurance organic resistive switching memory based on 1,2-dicyanobenzene and polymer composites

作　　者：李伟[1,2] 朱慧文 孙彤 屈文山 李建刚[1] 杨辉[2] 高志翔 施薇[3] 魏斌 王华[1,5] Li Wei;Zhu Hui-Wen;Sun Tong;Qu Wen-Shan;Li Jian-Gang;Yang Hui;Gao Zhi-Xiang;Shi Wei;Wei Bin;Wang Hua(Shanxi Province Key Laboratory of Microstructure Functional Materials Institute of Solid State Physics,Shanxi Datong University,Datong 037009,China;School of Chemistry and Chemical Engineering,Shanxi Datong University,Datong 037009,China;Key Laboratory of Advanced Display and System Applications,Ministry of Education,School of Mechatronic Engineering and Automation,Shanghai University,Shanghai 200072,China;School of Materials Science and Engineering,Shanghai University,Shanghai 200072,China;Key Laboratory of Interface Science and Engineering in Advanced Materials,Ministry of Education,Taiyuan University of Technology,Taiyuan 030024,China)

机构地区：[1]山西大同大学固体物理研究所,微结构电磁功能材料省市共建山西省重点实验室,大同037009 [2]山西大同大学化学与化工学院,大同037009 [3]上海大学机电工程与自动化学院,新型显示技术及应用集成教育部重点实验室,上海200072 [4]上海大学材料科学与工程学院,上海200072 [5]太原理工大学,新材料界面科学与工程教育部重点实验室,太原030024

出　　处：《物理学报》2023年第4期283-292,共10页Acta Physica Sinica

基　　金：山西省应用基础研究计划面上自然基金(批准号:201901D111316);山西省高等学校科技创新项目(批准号:2020L0488);大同市工业攻关项目(批准号:2019015);山西省研究生教育创新项目(批准号:2022Y761);山西大同大学研究生教育创新项目(批准号:22CX02,22CX16)资助的课题。

摘　　要：本文报道了一种基于1,2-二氰基苯(O-DCB)与聚(3-己基噻吩)(P3HT)复合薄膜的高耐久性有机阻变存储器(ORSM).ORSM表现出非易失型和双极性存储特性,电流开关比(I_(on/off))超过10^(4),耐久性高达400次,保持时间为10^(5)s,V_(set)和V_(reset)分别为-6.9 V和2.6 V.器件的阻变机理是陷阱电荷的俘获与去俘获,即负偏压或正偏压诱导电荷陷阱的填充和抽离过程,导致电荷传输方式的改变,从而产生高低电阻间的切换.器件的高耐久性一方面是由于O-DCB较小的分子尺寸和较好的溶解性形成了均匀分布且稳定的电荷陷阱,另一方面是由于O-DCB较好的分子平面促进了其与P3HT共轭链的相互作用.该研究为高耐久性ORSM的实现提供了一种有效途径,加快了ORSM的商业化应用进程.As the emerging data storage technology,organic resistive switching memory(ORSM)possesses numerous superiorities as the substitution for or the complementation of the traditional Si-based semiconductor memory.Poly(3-hexylthiophene)(P3HT)has been widely used as a polymer donor component of ORSMs due to its advantages of high mobility and high chemical stability.Up to now,ORSM based on P3HT has achieved high on/off current ratio(I_(on/off)),but the endurance still needs to be improved.Herein,high endurance ORSMs based on 1,2-dicyanobenzene(O-DCB)and P3HT composite are fabricated by spin coating and thermally evaporating,and exhibit non-volatile and bipolar memory characteristics.The ORSMs based on P3HT:15 wt.%O-DCB and P3HT:30 wt.%O-DCB exhibit the values of I_(on/off)exceeding 10^(4) and 10^(3) respectively,and both of them exert excellent endurance of 400 times,retention time of more than 10^(5) s.The mechanism of the switching is explored by linear fitting ofⅠ-Ⅴcurve and electrochemical impedance spectrum.The results indicate that the filling and vacant process of the charge traps induced by O-DCB and the inherent traps in P3HT bulk lead to a resistive switching effect.The negative or positive bias triggers off trapping and detrapping process,which leads the conductive way of charges to change,resulting in the resistive switching effect.The excellent endurance of ORSM is attributed to the uniform distribution of O-DCB in P3HT bulk because of the small molecular size and high solubility of O-DCB,resulting in well-distributed and stable charge traps.On the other hand,the outbound planarity of O-DCB molecular promotes the close interaction with the conjugated chains of P3HT.This study enlightens an effective strategy to carry out high-endurance ORSM and facilitates their electronic applications in future.

关 键 词：有机阻变存储器 聚合物/小分子复合薄膜 分子平面性 高耐久性 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]