AlGaN基深紫外LED电子阻挡层的智能优化设计  

Intelligent optimization design of electron barrier layer for AlGaN-based deep-ultraviolet light-emitting diodes

作　　者：冯丽雅 路慧敏 朱一帆 陈毅勇 于彤军[2] 王建萍[1] Feng Li-Ya;Lu Hui-Min;Zhu Yi-Fan;Chen Yi-Yong;Yu Tong-Jun;Wang Jian-Ping(School of Computer and Communication Engineering,Beijing University of Science and Technology,Beijing 100083,China;State Key Laboratory of Artificial Microstructure Physics and Mesoscopic Physics,School of Physics,Peking University,Beijing 100081,China)

机构地区：[1]北京科技大学计算机与通信工程学院,北京100083 [2]北京大学物理学院,人工微结构物理和介观物理国家重点实验室,北京100081

出　　处：《物理学报》2023年第4期293-302,共10页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:62234003);广东省基础与应用基础研究基金(批准号:2021B1515120086);佛山市人民政府科技创新专项资金(批准号:BK20BF013)资助的课题。

摘　　要：为了提高AlGaN基深紫外发光二极管(light emitting diode,LED)的内量子效率(internal quantum efficiency,IQE),本文采用了基于InAlGaN/AlGaN超晶格的电子阻挡层(electron blocking layer,EBL)结构,结果表明与传统的单层和双层电子阻挡层结构相比,超晶格EBL结构能够有效提高LED的内量子效率.在此基础上,本文提出了基于JAYA智能算法的LED结构优化方法,应用该方法以最大化内量子效率为目标,对InAlGaN/AlGaN超晶格EBL结构进行优化设计.结果表明,采用优化超晶格EBL结构后电子泄露和空穴注入问题都有所改善,在200 mA电流注入时深紫外LED的内量子效率比采用单层结构EBL提高了41.2%.AlGaN-based deep-ultraviolet light-emitting diodes(DUV LEDs) are widely used in sterilization,sensing,water purification,medical treatment,non-line of sight(NLOS) communication and many other fields.Especially it has been reported that the global novel coronavirus(COVID-19) can be effectively inactivated by the DUV light with a wavelength below 280 nm(UVC) within a few seconds,which has also attracted great attention.However,the external quantum efficiency(EQE) of UVC LED is still at a low level,generally not more than 10%.As an important component of EQE,internal quantum efficiency(IQE) plays a crucial role in realizing high-performance DUV-LED.In order to improve the IQE of AlGaN-based DUV-LED,this work adopts an electron blocking layer(EBL) structure based on InAlGaN/AlGaN superlattice.The results show that the superlattice EBL structure can effectively improve the IQE compared with the traditional single-layer and double-layer EBL structure for the DUV-LED.On this basis,the optimization method based on JAYA intelligent algorithm for LED structure design is proposed in this work.Using the proposed design method,the InAlGaN/AlGaN superlattice EBL structure is further optimized to maximize the LED’s IQE.It is demonstrated that the optimized super lattice EBL structure is beneficial to not only the suppression of electron leakage but also the improvement of hole injection,leading to the increase of carrier recombination in the active region.As a result,the IQE of the DUV-LED at 200 mA injection current is 41.2% higher than that of the single-layer EBL structure.In addition,the optimized structure reduces IQE at high current from 25% to 4%.The optimization method based on intelligent algorithm can break through the limitation of the current LED structure design and provide a new method to improve the efficiency of AlGaN-based DUV-LED.

关 键 词：深紫外LED 内量子效率 智能优化算法 电子泄漏 

分 类 号：TN312.8[电子电信—物理电子学] TP18[自动化与计算机技术—控制理论与控制工程]