单晶硅纳米磨削亚表面损伤形成机制及其抑制研究  

Study on formation mechanism and suppression of subsurface damage during nano-grinding of monocrystalline silicon

作　　者：田海兰[1] 韩涛[1] 闫少华 易红星 闫海鹏 TIAN Hailan;HAN Tao;YAN Shaohua;YI Hongxing;YAN Haipeng(School of Intelligent Engineering,Zhengzhou College of Finance and Economics,Zhengzhou 450000,CHN;School of Mechanical Engineering,Hebei University of Science and Technology,Shijiazhuang 050018,CHN)

机构地区：[1]郑州财经学院智能工程学院,河南郑州450000 [2]河北科技大学机械工程学院,河北石家庄050018

出　　处：《制造技术与机床》2023年第3期24-30,共7页Manufacturing Technology & Machine Tool

基　　金：河南省高等学校重点科研项目(22B460024);河北省自然科学基金项目(E2021208004);河北省教育厅青年基金项目(QN2021061)。

摘　　要：硅晶圆纳米磨削过程中产生的亚表面损伤限制了其使用寿命,亟需研究纳米磨削过程中单晶硅的亚表面损伤形成机制和抑制方法。文章首先建立了单晶硅纳米磨削的分子动力学仿真模型,研究其亚表面损伤形成机制。随后研究了磨削参数对磨削过程中磨削力、磨削温度以及亚表面损伤形成的影响机制。最后提出了单晶硅纳米磨削的损伤抑制策略。结果表明:单晶硅纳米磨削过程中结构相变和非晶化是其主要亚表面损伤形成机制。原始的Si-Ⅰ相在挤压和剪切作用下形成了Si-Ⅱ相、Si-Ⅲ相、Si-Ⅳ相、bct5-Si相以及非晶。磨削深度增加导致了磨削力和磨削温度升高,而磨削速度的增加导致磨削力减小,磨削温度升高。磨削力增大是导致亚表面损伤严重的主要原因,而一定程度的高温有利于抑制单晶硅的亚表面损伤。在纳米磨削单晶硅时,可通过减小磨削深度和提升磨削速度来实现亚表面损伤的抑制。The subsurface damage generated during nano-grinding of silicon wafers limits its service life. It is urgent to study the formation mechanism and suppression methods of subsurface damage during nanogrinding of monocrystalline silicon. In this study, a molecular dynamics simulation model of nanogrinding monocrystalline silicon was established to study the formation mechanism of subsurface damage. Then, the influence mechanism of grinding parameters on grinding force, grinding temperature and subsurface damage formation during grinding was studied. Finally, the damage suppression strategy of nano-grinding monocrystalline silicon was proposed. The results showed that the main subsurface damage formation mechanism was structural phase transformation and amorphousness during nano-grinding monocrystalline silicon. The original Si-Ⅰ phase formed Si-Ⅱ phase, Si-Ⅲ phase,Si-Ⅳ phase, bct5-Si phase and amorphous phase under extrusion and shear. The increase of grinding depth led to the increase of grinding force and grinding temperature, while the increase of grinding speed led to the decrease of grinding force and the increase of grinding temperature. The increased grinding force was the main reason for the serious subsurface damage, and a certain degree of high temperature was beneficial to inhibit the subsurface damage of monocrystalline silicon. In nanogrinding of monocrystalline silicon, subsurface damage can be suppressed by reducing grinding depth and increasing grinding speed.

关 键 词：分子动力学 单晶硅 纳米磨削 亚表面损伤 磨削参数 

分 类 号：TN305[电子电信—物理电子学] TB321[一般工业技术—材料科学与工程]