Achieving highly-efficient H2S gas sensor by flower-like SnO_(2)–SnO/porous GaN heterojunction  

作　　者：刘增 都灵 张少辉 边昂 方君鹏 邢晨阳 李山 汤谨诚 郭宇锋 唐为华 Zeng Liu;Ling Du;Shao-Hui Zhang;Ang Bian;Jun-Peng Fang;Chen-Yang Xing;Shan Li;Jin-Cheng Tang;Yu-Feng Guo;Wei-Hua Tang(College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China;National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies,Nanjing University of Posts and Telecommunications,Nanjing 210023,China;School of Electronic and Information Engineering,Jinling Institute of Technology,Nanjing 211169,China;Institute of Microscale Optoelectronics,Shenzhen University,Shenzhen 518060,China;Key Laboratory of Luminescence and Optical Information of Ministry of Education,Institute of Optoelectronic Technology,Beijing Jiaotong University,Beijing 100044,China;School of Integrated Circuits,Tsinghua University,Beijing 100044,China;Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China;State Key Laboratory of Information Photonics and Optical Communications,School of Science,Beijing University of Posts and Telecommunications,Beijing 100876,China)

机构地区：[1]College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China [2]National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies,Nanjing University of Posts and Telecommunications,Nanjing 210023,China [3]School of Electronic and Information Engineering,Jinling Institute of Technology,Nanjing 211169,China [4]Institute of Microscale Optoelectronics,Shenzhen University,Shenzhen 518060,China [5]Key Laboratory of Luminescence and Optical Information of Ministry of Education,Institute of Optoelectronic Technology,Beijing Jiaotong University,Beijing 100044,China [6]School of Integrated Circuits,Tsinghua University,Beijing 100044,China [7]Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China [8]State Key Laboratory of Information Photonics and Optical Communications,School of Science,Beijing University of Posts and Telecommunications,Beijing 100876,China

出　　处：《Chinese Physics B》2023年第2期193-200,共8页中国物理B（英文版）

基　　金：supported by the Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications (Grant Nos. XK1060921115 and XK1060921002);Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 62204125);the National Key R&D Program of China (Grant No. 2022YFB3605404);the Natural Science Foundation of Guangdong Province, China (Grant No. 2019A1515010790)。

摘　　要：A flower-like SnO_(2)–SnO/porous Ga N(FSS/PGaN) heterojunction was fabricated for the first time via a facile spraying process, and the whole process also involved hydrothermal preparation of FSS and electrochemical wet etching of GaN,and SnO_(2)–SnO composites with p–n junctions were loaded onto PGaN surface directly applied to H_(2)S sensor. Meanwhile,the excellent transport capability of heterojunction between FSS and PGaN facilitates electron transfer, that is, a response time as short as 65 s and a release time up to 27 s can be achieved merely at 150℃ under 50 ppm H_(2)S concentration, which has laid a reasonable theoretical and experimental foundation for the subsequent PGaN-based heterojunction gas sensor.The lowering working temperature and high sensitivity(23.5 at 200 ppm H2S) are attributed to the structure of PGaN itself and the heterojunction between SnO_(2)–SnO and PGaN. In addition, the as-obtained sensor showed ultra-high test stability.The simple design strategy of FSS/PGaN-based H_(2)S sensor highlights its potential in various applications.

关 键 词：gas sensor SnO_(2)–SnO porous GaN HETEROJUNCTION 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TB332[自动化与计算机技术—控制科学与工程]