Effect of thickness of antimony selenide film on its photoelectric properties and microstructure  

作　　者：刘欣丽 翁月飞 毛宁 张培晴 林常规 沈祥 戴世勋 宋宝安 Xin-Li Liu;Yue-Fei Weng;Ning Mao;Pei-Qing Zhang;Chang-Gui Lin;Xiang Shen;Shi-Xun Dai;Bao-An Song(Facully of Electrical Enginering and Computer Science,Ningbo University,Ningbo 315211,China;The Research Institute of Advanced Technologies,Ningbo University,Ningbo 315211,China;Key Laboratory of Photoelectric Detecting Materials and Devices of Zhejiang Province,Ningbo 31521,China;Ningbo Institute of ceangraphy,Ningbo University,Ningbo 315211,China;Enginering Research Center for Advanced Infrared Photoeletric Materials and Devices of Zhejiang Province,Ningbo 315211,China)

机构地区：[1]Faculty of Electrical Engineering and Computer Science, Ningbo University,Ningbo 315211,China [2]The Research Institute of Advanced Technologies,Ningbo University,Ningbo 315211,China [3]Key Laboratory of Photoelectric Detecting Materials and Devices of Zhejiang Province,Ningbo 31521,China [4]Ningbo Institute of ceangraphy,Ningbo University,Ningbo 315211,China [5]Engineering Research Center for Advanced Infrared Photoelectric Materials and Devices of Zhejiang Province,Ningbo 315211,China

出　　处：《Chinese Physics B》2023年第2期485-492,共8页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant Nos. 62075109, 62135011, 62075107, and 61935006);K. C. Wong Magna Fund in Ningbo University。

摘　　要：Antimony selenide(Sb2Se3) films are widely used in phase change memory and solar cells due to their stable switching effect and excellent photovoltaic properties. These properties of the films are affected by the film thickness. A method combining the advantages of Levenberg–Marquardt method and spectral fitting method(LM–SFM) is presented to study the dependence of refractive index(RI), absorption coefficient, optical band gap, Wemple–Di Domenico parameters, dielectric constant and optical electronegativity of the Sb2Se3films on their thickness. The results show that the RI and absorption coefficient of the Sb2Se3films increase with the increase of film thickness, while the optical band gap decreases with the increase of film thickness. Finally, the reasons why the optical and electrical properties of the film change with its thickness are explained by x-ray diffractometer(XRD), energy dispersive x-ray spectrometer(EDS), Mott–Davis state density model and Raman microstructure analysis.

关 键 词：antimony selenide films photoelectric properties Levenberg–Marquardt method and spectral fitting method(LM–SFM) MICROSTRUCTURE 

分 类 号：O484.4[理学—固体物理]