High performance SiC trench-type MOSFET with an integrated MOS-channel diode  

作　　者：魏杰 姜钦峰 罗小蓉 黄俊岳 杨可萌 马臻 方健 杨霏 Jie Wei;Qinfeng Jiang;Xiaorong Luo;Junyue Huang;Kemeng Yang;Zhen Ma;Jian Fang;Fei Yang(School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China;Global Energy ineroection Research Instute,Bejing 102209,China)

机构地区：[1]School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China [2]Global Energy Interconnection Research Institute,Bejing 102209,China

出　　处：《Chinese Physics B》2023年第2期519-524,共6页中国物理B（英文版）

基　　金：the support by the Science & Technology Program (High voltage and high power SiC material, devices and the application demonstration in power electronic transformers) of the State Grid Corporation of China Co. Ltd.;supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400502)。

摘　　要：A novel SiC double-trench metal-oxide-semiconductor field effect transistor(MOSFET) with integrated MOS-channel diode is proposed and investigated by Sentaurus TCAD simulation. The new SiC MOSFET has a trench gate and a stepped-trench source, and features an integrated MOS-channel diode on the top sidewall of the source trench(MT MOS). In the reverse conduction state, the MOS-channel diode turns on firstly to prevent the internal parasitic body diode being activated, and thus reduces the turn-on voltage VFand suppresses the bipolar degradation phenomena. The VFof1.70 V(@Ids=-100 A/cm^(2)) for the SiC MT MOS is 38.2% lower than that of SiC double-trench MOSFET(DT MOS).Meanwhile, the reverse recovery charge Qrrof the MT MOS is 58.7% lower than that of the DT MOS at Iload= 700 A/cm^(2),and thus the reverse recovery loss is reduced. Furthermore, owing to the modulation effect induced by the double trenches,the MT MOS preserves the same superior forward conduction and blocking performance as those of DT MOS, with 22.9% and 18.2% improvement on breakdown voltage and RON,spcompared to the trench gate MOSFET with planar integrated SBD(ST MOS).

关 键 词：SiC MOSFET bipolar degradation MOS-channel diode reverse recovery 

分 类 号：TN386[电子电信—物理电子学]