An Improved Behavioral Model for High-voltage and High-power IGBT Chips  

作　　者：Yixuan Yang Zhibin Zhao Cheng Peng Xuebao Li Zhiyu Sun Xiang Cui 

机构地区：[1]State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources,North China Electric Power University,Beijing 102206,China

出　　处：《CSEE Journal of Power and Energy Systems》2023年第1期284-292,共9页中国电机工程学会电力与能源系统学报（英文）

基　　金：This work was supported by the National Natural Science Foundation of China-State Grid Corporation Joint Fund for Smart Grid(No.U1766219).

摘　　要：High-voltage and high-power IGBT chips have a noticeable carrier storage effect,which is related to the load current.However,the research on the carrier storage effect of existing IGBT behavior models is insufficient.In this paper,An improved behavioral model for high-voltage and high-power insulated gate bipolar transistor(IGBT)chips is proposed,which could be used under different load conditions.The problems for applying the traditional behavioral model to more load conditions are discussed.Carrier behavior,in the wide base region,is analyzed,and the analytical expression of the carrierstorage-effect equivalent capacitance and the initial value of the tail current are provided to establish an improved IGBT behavioral model.A corresponding parameter extraction method is proposed.In order to verify the improved behavioral model,an experimental platform is built for resistive load and inductive load,and the results show that the accuracy of the improved behavioral model is much better than that of the traditional model.In addition,the errors of the improved model are within 12.5%under different current and load types.Considering that the maximum error of other models,which could be applied in a variety of load conditions,is more than 25%,the accuracy of the model proposed in this paper is excellent.

关 键 词：Carrier storage effect high voltage IGBT behavioral model turn-off transient 

分 类 号：TN3[电子电信—物理电子学]