超临界流体改善IGZO薄膜晶体管光电特性研究  

Electrical and optical performance improvement of IGZO thin film transistors by supercritical fluids treatment

作　　者：董礼[1] 王明格 张冠张 DONG Li;WANG Mingge;ZHANG Guanzhang(The 43th Research Institute of China Electronics Technology Group Corporation(CETC),Hefei 230088,China;School of Electronic and Computer Engineering,Peking University Shenzhen Graduate School,Shenzhen 518055,Guangdong Province,China)

机构地区：[1]中国电子科技集团公司第四十三研究所,安徽合肥230088 [2]北京大学深圳研究生院信息工程学院,广东深圳518055

出　　处：《电子元件与材料》2023年第1期63-68,共6页Electronic Components And Materials

基　　金：国家自然科学基金(面上项目)(62074007)。

摘　　要：随着高速、高分辨率、全透明的显示技术不断发展,对全透明薄膜晶体管(Thin-Film Transistor, TFT)的电学和光学性能均提出了更高的要求。首先在玻璃衬底上制备了以非晶铟镓锌氧化物(Amorphous Indium-Gallium-Zinc Oxide, a-IGZO)为有源层、铟锡氧化物(Indium Tin Oxide, ITO)为电极的全透明薄膜晶体管。并以低温环保的超临界流体技术进一步改善器件特性,超临界流体具有高溶解和高渗透性,可进入器件内部,修复材料中的断键,消除器件的缺陷,进而提升器件综合性能。实验结果表明,处理后器件的亚阈值摆幅从451.44 mV/dec下降至231.56 mV/dec,载流子迁移率从8.57 cm^(2)·V^(-1)·s^(-1)增至10.46 cm^(2)·V^(-1)·s^(-1),电流开关比提升了一个数量级。此外,超临界处理后器件的光电应力稳定性和光学透明度均得到有效改善。The continued development of the display technology places demanding requirements on the electrical and optical features of the fully transparent thin-film transistor(TFT). In this research, transparent TFT with amorphous indium-gallium-zinc oxide(a-IGZO) as the active layer and indium tin oxide(ITO) as the electrodes was fabricated on the glass substrate. The characteristics of the device were further improved by a low-temperature and environmentally friendly supercritical fluid(SCF) treatment. This highly soluble and permeable supercritical fluid can enter the device to repair dangling bonds and eliminate defects, thereby enhancing the overall performance of the device. Experimental results show that the subthreshold swing of the SCF-treated TFT decreases from 451.44 mV/dec^(-1)to 231.56 mV/dec, the carrier mobility increases from 8.57 cm^(2)·V^(-1)·s^(-1)to 10.46 cm^(2)·V^(-1)·s^(-1), and the On/Off current ratio improves by one order of magnitude. In addition, after supercritical treatment, the optoelectronic stress stability and optical transparency of the devices are effectively enhanced.

关 键 词：薄膜晶体管 超临界流体 缺陷 迁移率 光电特性 

分 类 号：TN321.5[电子电信—物理电子学]