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作 者:张健[1] 崔岩[2] 郝捷[2] ZHANG Jian;CUI Yan;HAO Jie(State Grid Tianjin Electric Power Company,Tianjin 300010,China;不详)
机构地区:[1]国网天津市电力公司,天津300010 [2]国网天津市电力公司检修公司,天津300230
出 处:《电力电子技术》2023年第2期137-140,共4页Power Electronics
摘 要:交直流柔性输电技术的飞速发展,对压接型绝缘栅双极型晶体管(IGBT)器件的可靠性要求进一步提高。各组件间的接触电阻与接触热阻是影响器件内部各芯片的压力分布以及温度分布的重要因素,而烧结银技术可以显著降低界面的接触电阻和接触热阻,因此烧结连接方式近年来被广泛应用于压接型IGBT器件中。这里针对全压接和不同烧结方式的压接型IGBT建立了多物理场有限元模型,通过实验测量的瞬态热阻抗曲线验证有限元模型的准确,获得了功率循环工况下器件的热力特性。计算结果表明,烧结可以降低最高结温并且使得温度分布更加均匀,但给芯片表面带来了较大的热应力,集电极侧烧结方式下温度分布和应力分布都较为均匀,具有较高的功率循环寿命。The rapid development of flexible direct current transmission technology has further improved the reliability requirements of press package insulated gate bipolar transistor(IGBT).The contact resistance and contact thermal resistance between components are important factors that affect the stress distribution and temperature distribution of each chip inside the device,and the sintered silver technology can significantly reduce the contact resistance and contact thermal resistance of the interface,so the sintering connection method has been widely used in recent years used in press package IGBT.A multi-physics finite element model is established for the press package IGBT of full press and different sintering methods,the accuracy of the finite element model is verified by the experimentally measured transient thermal impedance curve and the thermal characteristics of the device under power cycling conditions are obtained.The calculation results show that sintering can reduce the maximum junction temperature and make the temperature distribution more uniform,but it brings greater thermal stress to the chip surface.The temperature distribution and stress distribution in the collector side sintering method are relatively uniform,and it has a higher power cycle life.
分 类 号:TN32[电子电信—物理电子学]
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