混合IGBT模块开通振荡影响因素分析及抑制  

Analysis and Suppression of Opening Oscillation of Hybrid IGBT Module

作　　者：李肖 王之昕 张惠 田伟 LI Xiao;WANG Zhi-xin;ZHANG Hui;TIAN Wei(State Grid Jibei Electric Power Company Limited Smart Distribution Network Center,Qinhuangdao 066100,China)

机构地区：[1]国网冀北智能配网中心,河北秦皇岛066100

出　　处：《电力电子技术》2023年第1期137-140,共4页Power Electronics

摘　　要：首先就门极驱动对开通振荡的影响因素进行分析和研究,使用了不同的门极驱动电压和门极充电电流进行混合绝缘栅双极型晶体管(IGBT)模块的开关测试,发现仅改变门极驱动参数不能明显减小开通振荡的持续时间。在此基础上进一步提出了一种用阻尼电路抑制开通振荡的方法。通过理论分析和实验验证了阻尼电路可以有效地加快开通振荡的衰减,同时不会使开通电流过冲和损耗明显增加。结合阻尼电路和有源驱动方法可以令使用混合IGBT模块的系统获得更好的电磁兼容性能。The effect of gate drive on opening oscillation is studied firstly.Different gate drive voltage and gate charging current are used to test the switch of hybrid insulated gate bipolar transistor(IGBT) module.It is found that only changing the gate drive parameters can not significantly reduce the duration of opening oscillation.On the basis of this,a damping circuit is proposed to suppress the opening oscillation.Through theoretical analysis and experiments,it is proved that the damping circuit can effectively accelerate the attenuation of the opening oscillation without increasing the opening current over-rush and loss obviously.The combination of damping circuit and active drive method can make the system using hybrid IGBT module achieve better electromagnetic compatibility performance.

关 键 词：混合绝缘栅双极型晶体管模块 开通振荡 有源驱动 

分 类 号：TN32[电子电信—物理电子学]