CZTS光阴极性能提升研究进展  

Research progress on performance improvement of CZTS photocathode

作　　者：陈巧玲 王思琪 张崇文 郑毅[1] Chen Qiaoling;Wang Siqi;Zhang Chongwen;Zheng Yi(School of Petrochemical Engineering,Lanzhou University of Technology,Lanzhou 730050,Gansu,China)

机构地区：[1]兰州理工大学石油化工学院,甘肃兰州730050

出　　处：《工业催化》2023年第2期1-6,共6页Industrial Catalysis

基　　金：国家自然科学基金青年基金项目(21802060);2017年博士科研启动项目(061701)。

摘　　要：Cu_(2)ZnSnS_(4)(CZTS)禁带宽度为1.5eV,是一种较宽光响应范围P型半导体,其理论光电流密度可达25 mA·cm^(-2),理论太阳能转氢能效率(STH)为32.2%,是一类重要的光电催化水分解制氢材料。然而,CZTS光阴极自身仍然存在较高的载流子复合几率和较低的表面反应速率等缺点,因此目前已报道的最高STH仅为12.6%。针对此问题,综述了近些年对CZTS的相关研究及改性方法,并对其未来发展进行展望。Cu_(2)ZnSnS_(4)(CZTS),with a forbidden band width of 1.5 eV,is a wide photoresponse range P-type semiconductor with a theoretical photocurrent density of 25 mA·cm^(-2) and a theoretical solar-to-hydrogen energy efficiency(STH) of 32.2%,making it an important class of photocatalytic hydrogen production materials.However, the CZTS photocathode itself still suffers from the disadvantages of high carrier complexation rate and low surface reaction rate, so the highest STH reported so far is only 12.6%.To address this issue, the relevant researches and modification methods of CZTS in recent years are reviewed, and their future development is prospected.

关 键 词：能源化学 铜锌锡硫 光电催化 离子掺杂 助催化剂 异质结 

分 类 号：O643.36[理学—物理化学] TQ034[理学—化学]