高温扩散工艺制备带隙可调的β-(Al_(x)Ga_(1-x))_(2)O_(3)薄膜  

β-(Al_(x)Ga_(1-x))_(2)O_(3) Thin Films with Tunable Band Gap Prepared by High Temperature Diffusion

作　　者：谭黎 张俊 张敏 赵荣力 邓朝勇 崔瑞瑞 TAN Li;ZHANG Jun;ZHANG Min;ZHAO Rongli;DENG Chaoyong;CUI Ruirui(Key Laboratory of Electronic Composites of Guizhou Province,College of Big Data and Information Engineering,Guizhou University,Guiyang 550025,China;College of Computer and Information Engineering,Guizhou University of Commerce,Guiyang 550014,China;School of Electronics and Information Engineering,Guiyang University,Guiyang 550005,China)

机构地区：[1]贵州大学大数据与信息工程学院,贵州省电子功能复合材料特色重点实验室,贵阳550025 [2]贵州商学院计算机与信息工程学院,贵阳550014 [3]贵阳学院电子与通信工程学院,贵阳550005

出　　处：《人工晶体学报》2023年第2期281-288,共8页Journal of Synthetic Crystals

基　　金：贵州省科学技术基金(ZK[2021]一般328);贵州省教育厅科技拔尖人才项目(黔教技[2022]085号);贵州省教育厅滚动支持省属高校科研平台团队项目(黔教技[2022]036号)。

摘　　要：β-(Al_(x)Ga_(1-x))_(2)O_(3)因其优异的抗击穿及带隙可调节性在现代功率器件及深紫外光电探测等领域展现出巨大的应用前景,然而传统直接生长工艺的复杂性和难度限制了其进一步的发展。因此,本文采用较为简单的高温扩散工艺在c面蓝宝石衬底上成功制备了β-(Al_(x)Ga_(1-x))_(2)O_(3)纳米薄膜。利用X射线衍射、原子力显微镜、扫描电子显微镜和紫外-可见分光光度计对其进行了表征。由于高温下蓝宝石衬底中的Al原子向Ga_(2)O_(3)层扩散,β-Ga_(2)O_(3)薄膜将转变为Al、Ga原子比例不同的β-(Al_(x)Ga_(1-x))_(2)O_(3)薄膜。实验结果显示:当退火温度从1 010℃增加到1 250℃时,薄膜中Al的平均含量从0.033增加到0.371;当退火温度从950℃增加到1 250℃时,薄膜的厚度从186 nm增加到297 nm,粗糙度从2.31 nm增加到15.10 nm;当退火温度从950℃增加到1 190℃时,薄膜的带隙从4.79 eV增加至5.96 eV。结果表明高温扩散工艺能够有效调节β-(Al_(x)Ga_(1-x))_(2)O_(3)薄膜的光学带隙,为β-(Al_(x)Ga_(1-x))_(2)O_(3)基新型光电子器件提供了实验基础。β-(Al_(x)Ga_(1-x))_(2)O_(3)presents great applications in modern power devices and deep ultraviolet photoelectric detection for their excellent anti-breakdown and tunable band gap. However, the complexity and difficulty of the traditional fabrication processes limit their further development. In this work, a relatively simple high temperature diffusion process was used to successfully prepare β-(Al_(x)Ga_(1-x))_(2)O_(3)nano films on c-sapphire substrates. The films were investigated by X-ray diffraction, atomic force microscope, scanning electron microscope, and ultraviolet visible spectrophotometer. Since Al atoms in sapphire substrates will diffuse into the Ga_(2)O_(3)layer at high temperatures, β-Ga_(2)O_(3)thin films will be converted into β-(Al_(x)Ga_(1-x))_(2)O_(3)thin films with different ratios of Al to Ga atoms. It illustrates that with the increase of annealing temperature from 1 010 ℃ to 1 250 ℃, the average content of Al in the films increases from 0.033 to 0.371. Meanwhile, the thickness of films increase from 186 nm to 297 nm, accompanied by the roughness increase from 2.31 nm to 15.10 nm with the increase of the annealing temperature from 950 ℃ to 1 250 ℃. While increasing the annealing temperature from 950 ℃ to 1 190 ℃, the band gap of films increases from 4.79 eV to 5.96 eV. The results suggest that the high temperature diffusion process can effectively adjust the optical band gap of β-(Al_(x)Ga_(1-x))_(2)O_(3)thin films, providing an experimental basis for novel β-(Al_(x)Ga_(1-x))_(2)O_(3)-based optoelectronic devices.

关 键 词：β-(Al_(x)Ga_(1-x))_(2)O_(3) Ga_(2)O_(3) AL掺杂 半导体薄膜 高温扩散 可调带隙 磁控溅射 

分 类 号：TN304[电子电信—物理电子学] TQ133.5[化学工程—无机化工]