Investigation of UV photosensor properties of Al-doped SnO_(2) thin films deposited by sol-gel dip-coating method  

作　　者：Kaour Selma Benkara Salima Bouabida Seddik Rechem Djamil Hadjeris Lazhar 

机构地区：[1]Laboratory of Materials and Structure of Electromechanical Systems and their Reliability,Oum El Bouaghi University,Algeria [2]Faculty of Exact Sciences and Natural and Life Sciences,Oum El Bouaghi University,Algeria [3]Electrical Engineering Department,Oum El Bouaghi University,Algeria [4]Laboratory of Active Components and Materials,Oum El Bouaghi University,Algeria

出　　处：《Journal of Semiconductors》2023年第3期114-123,共10页半导体学报（英文版）

基　　金：support of the laboratory of active components and materials,Oum El Bouaghi University.

摘　　要：Transparent conducting aluminum doped tin oxide thin films were prepared by sol-gel dip coating method with differ-ent Al concentrations and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis spectrophotometry and photoconductivity study. The variation observed in the properties of the measured films agrees with a difference in the film's thickness, which decreases when Al concentration augments. X-ray diffraction analysis reveals that all films are polycrystal-line with tetragonal structure, (110) plane being the strongest diffraction peak. The crystallite size calculated by the Debye Scher-rer’s formula decreases from 11.92 to 8.54 nm when Al concentration increases from 0 to 5 wt.%. AFM images showed grains uni-formly distributed in the deposited films. An average transmittance greater than 80% was measured for the films and an en-ergy gap value of about 3.9 eV was deduced from the optical analysis. Finally, the photosensitivity properties like current-voltage characteristics, ION/IOFF ratio, growth and decay time are studied and reported. Also, we have calculated the trap depth energy using the decay portion of the rise and decay curve photocurrent.

关 键 词：tin oxide thin films SOL-GEL UV photodetector photoconductivity trap depth 

分 类 号：TB383.2[一般工业技术—材料科学与工程] TN23[电子电信—物理电子学] TP212[自动化与计算机技术—检测技术与自动化装置]