GaN功率器件应用可靠性增长研究  

Research on Work Reliability of GaN Power Devices

作　　者：江元俊[1] 王卫华[1] 郑新[1] JIANG Yuan-jun;WANG Wei-hua;ZHENG Xin(The 14th Research Institute of China Electronics Technology Group Corporation,Nanjing 210039,China)

机构地区：[1]中国电子科技集团公司第十四研究所,南京210039

出　　处：《微波学报》2023年第1期62-67,共6页Journal of Microwaves

摘　　要：GaN功率器件是雷达T/R组件或发射功放组件中的核心元器件,随着器件的输出功率和功率密度越来越高,器件的长期可靠性成为瓶颈。文章对雷达脉冲工作条件下GaN功率器件的失效机理进行了分析和研究,指出高漏源过冲电压、栅源电压的稳定性以及GaN管芯的沟道温度的高低是影响GaN功率器件长期应用可靠性的主要因素,同时给出了降低漏源过冲电压、提高栅源电压稳定性以及改善GaN管芯的沟道温度的措施和方法。GaN power devices are core devices in radar T/R modules or power amplifier modules. With the higher and higher demand on output power and power density of devices, long-term reliability becomes bottleneck gradually. In this paper, the failure mechanism of GaN power devices in radar pulse operation is analyzed and researched. High drain-source overshoot voltage, gate-source voltage stability and channel temperature of GaN transistor chip are main causes for influencing long-term work reliability of power devices. The methods of lowering the drain-source overshoot voltage, increasing the stability of gate-source voltage and improving channel temperature of GaN transistor chip are introduced.

关 键 词：GaN功率器件 应用可靠性 漏源偏置电压 电压过冲 栅流 管芯结温 加速寿命试验 

分 类 号：TN957[电子电信—信号与信息处理] TN722.75[电子电信—信息与通信工程]