Bending strain effects on the optical and optoelectric properties of GaN nanowires  

作　　者：Xuewen Fu Haixia Nie Zepeng Sun Min Feng Xiang Chen Can Liu Fang Liu Dapeng Yu Zhimin Liao 

机构地区：[1]Ultrafast Electron Microscopy Laboratory,The MOE Key Laboratory of Weak-Light Nonlinear Photonics,School of Physics,Nankai University,Tianjin 300071,China [2]Shenzhen Institute for Quantum Science and Engineering,and Department of Physics,Southern University of Science and Technology,Shenzhen 518055,China [3]State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics,School of Physics,Peking University,Beijing 100871,China [4]Peking University Yangtze Delta Institute of Optoelectronics,Nantong 226010,China

出　　处：《Nano Research》2022年第5期4575-4581,共7页纳米研究（英文版）

基　　金：This work was supported by the National Natural Science Foundation of China(No.11974191);the National Key Research and Development Program of China(No.2020YFA0309300);the Natural Science Foundation of Tianjin(Nos.20JCZDJC00560 and 20JCJQJC00210);the 111 Project(No.B07013);the“Fundamental Research Funds for the Central Universities”,Nankai University(Nos.91923139,63213040,and C029211101).

摘　　要：Elastic strain has been an important method to regulate the electronic structures and physical properties of nanoscale semiconductors due to the promising potentials in improving the performance of their optoelectronic devices.Here,we report the investigation of bending strain effects on the optical and optoelectric properties of individual gallium nitride(GaN)nanowires(NWs).By charactering the near-band emission spectrum of individual GaN NWs at different bending strains with low temperature cathodoluminescence(CL),we reveal that the near-band emission splits into two peaks,where the low energy peak displays a linear redshift with increasing the bending strain while the high energy one shows a slight blueshift.Further localized ultraviolet(UV)photoresponse measurements illustrate that the photoresponse of the GaN NWs shows a linear increase with the bending train,and the maximum enhancement is more than two orders of magnitude.The experimental observations are well interpreted by theoretical calculations on the strain modulation on the electronic band structure of GaN combined with analysis of carrier dynamics and optical waveguide effect in the bending strain field.Our results not only shed light on the bending strain effects on the optical and optoelectric properties of semiconductors,but also hold potential to help the future design of high performance nano-optoelectric devices.

关 键 词：bending strain GaN nanowires CATHODOLUMINESCENCE ultraviolet photoresponse energy band structure 

分 类 号：TB383[一般工业技术—材料科学与工程]