硒化温度对Sb_(2)(S,Se)_(3)薄膜性能影响的研究  

Effect of Selenization Temperature on the Properties of Sb_(2)(S,Se)_(3)Thin Films

作　　者：赵毅杰 盛钦阳 唐正霞[1] 胡瑶瑶 崔杨丽 王威 ZHAO Yi-jie;SHENG Qin-yang;TANG Zheng-xia;HU Yao-yao;CUI Yang-li;WANG Wei(Jinling Institute of Technology,Nanjing 211169,China)

机构地区：[1]金陵科技学院材料工程学院,江苏南京211169

出　　处：《金陵科技学院学报》2022年第4期80-85,共6页Journal of Jinling Institute of Technology

基　　金：国家自然科学基金青年项目(51904128);中国博士后科学基金面上项目(2021M702416);金陵科技学院博士科研启动基金(jit-b-201905)。

摘　　要：为了探索环保低成本的薄膜太阳电池吸收层材料的制备工艺,以水为前驱体溶剂,采用喷雾热解法制备Sb_(2)(S,Se)_(3)薄膜,研究硒化温度对薄膜的物相结构、微观形貌、光学性能和光电化学性能的影响。结果表明随着硒化温度的升高,薄膜的结晶度提高,Sb_(2)(S,Se)_(3)的带隙值从1.74 eV降低到1.56 eV。硒化温度300℃时的薄膜较其他硒化温度下的薄膜具有更强的光电流响应。In order to explore the environment-friendly and low-cost preparation process of thin film solar cell absorbing layer materials,Sb_(2)(S,Se)_(3)thin films were prepared by spray pyrolysis method with water as the precursor solvent.The effects of selenization temperature on the phase structure,micro-morphology,optical properties and photoelectrochemical properties of the films were studied.The results showed that the crystallinity of the film was better and the band gap value of Sb_(2)(S,Se)_(3)decreased from 1.74 eV to 1.56 eV with the increase of selenide temperature.The samples at selenide temperature of 300℃had stronger photocurrent response than those with other selenide temperatures.

关 键 词：喷雾热解法 Sb_(2)(S Se)_(3)薄膜 硒化温度 光电性能 

分 类 号：TB32[一般工业技术—材料科学与工程]