低成本Si基GaN微电子学的新进展  

New Progress in Low Cost Si-Based GaN Microelectronics

作　　者：李永[1] 赵正平[2,3] Li Yong;Zhao Zhengping(The 13^(th)Research Institute,CETC,Shijiazhuang 050051,China;China Electronics Technology Co.,Ltd.,Bejing 100846,China;Science and Technologyon ASIC Laboratory,Shjiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]中国电子科技集团公司,北京100846 [3]专用集成电路重点实验室,石家庄050051

出　　处：《半导体技术》2023年第2期81-101,共21页Semiconductor Technology

摘　　要：进入21世纪后,宽禁带半导体GaN微电子学发展迅速,SiC基GaN微电子学已成为微波电子学的发展主流,且正在向更高频率和更高功率密度的新一代GaN微波功率器件发展。为了降低成本,Si基GaN微电子学应运而生,在5G通信、电动汽车等绿色能源应用发展的带动下,Si基GaN微电子学已进入产业化快速发展阶段。介绍了Si基GaN微电子学在射频Si基GaN高电子迁移率晶体管(HEMT)新器件结构、工艺与可靠性,Si基GaN HEMT单片微波集成电路(MMIC),Si基E模功率GaN HEMT结构设计,大尺寸Si基GaN HEMT工艺,Si基GaN功率开关器件的可靠性,Si基GaN功率变换器的单片集成和高频开关Si基GaN器件的应用创新等工程化、产业化方面的最新技术进展。分析和评价了低成本Si基GaN微电子学工程化和产业化的发展态势。After entering the 21stcentury,the wide band gap semiconductor GaN microelectronics has developed rapidly.SiC-based GaN microelectronics has become the mainstream of microwave electronics,and is developing to a new generation of GaN microwave power devices with higher frequency and higher power density.In order to reduce the cost,Si-based GaN microelectronics comes into being.Driven by the application and development of 5G communication,electric vehicles and other green energy,Si-based GaN microelectronics has entered the rapid development stage of industrialization.The latest technological progress in engineering and industrialization of Si-based GaN microelectronics is introduced,including the new device structure,process and reliability of RF Si-based GaN high electron mobility transistor(HEMT),Si-based GaN HEMT monolithic microwave integrated circuit(MMIC),the structure design of Si-based E-mode power GaN HEMT,the large size Si-based GaN HEMT process,the reliability of Si-based GaN power switching devices,the monolithic integration of Si-based GaN power converters,and application innovation of Si-based GaN devices for high-frequency switching.The development trend of engineering and industrialization of low cost Si-based GaN microelectronics engineering is analyzed and evaluated.

关 键 词：Si基GaN高电子迁移率晶体管(HEMT) 单片微波集成电路(MMIC) E模功率GaN HEMT 可靠性 GaN功率变换器 高频开关应用 

分 类 号：TN303[电子电信—物理电子学]