高压碳化硅IGBT器件的电学特性  

Electrical Characteristics of High Voltage Silicon Carbide IGBT

作　　者：肖凯 刘航志 王振 邹延生 王俊[2] Xiao Kai;Liu Hangzhi;Wang Zhen;Zou Yansheng;Wang Jun(China Southern Power Grid Extra High Voltage Power Transmission Company Maintenance Test Center,Guangzhou510080,China;School of Electronic and Information Engineering,Hunan University,Changsha 410082,China)

机构地区：[1]中国南方电网有限责任公司超高压输电公司检修试验中心,广州510080 [2]湖南大学电气与信息工程学院,长沙410082

出　　处：《半导体技术》2023年第2期102-109,139,共9页Semiconductor Technology

基　　金：南方电网直流输电装备与海底电缆安全运行联合实验室开放基金资助项目。

摘　　要：借助计算机辅助设计技术(TCAD)仿真并结合基础物理建模,对SiC n和p沟道IGBT器件的电学特性进行比较研究。研究表明,在小电流密度下,n-IGBT电导调制效应较强,并具有较低的通态压降。而在较大的正向偏置电压下,p-IGBT背部的n^(+)注入层的正向载流子注入增强,从而使得p-IGBT导通电流较大。相比较npn晶体管而言,由于n-IGBT内部pnp晶体管的电流增益较低,关断过程中载流子的抽取电流较高,耗尽层扩展速度较快,使得其关断时间较短,因而n-IGBT在动态关断能耗和正向导通压降之间具有较好的折中关系。但n-IGBT关断过程中电压变化率(dv/dt)、电流变化率(di/dt)值较高,特别是发生电压穿通现象过后。因此,应对n-IGBT电磁干扰(EMI)抑制的器件设计技术加以重视。A comparative study on electrical characteristics of n-channel and p-channel SiC IGBT devices was presented by means of technology computer-aided design(TCAD) simulation and fundamental physical modeling.It is found that at low current densities, n-IGBT exhibits stronger conductivity modulation effect, and thus has a smaller forward voltage drop.Nevertheless, p-IGBT has a stronger current conduction capability at high forward biasd voltage due to the enhanced forward carrier injection from the backside n+injection layer.Compared with the npn transistor, the current gain of the internal pnp transistor in n-IGBT is much lower, thus the carrier extraction current is much higher in the turn-off process, the expansion rate of the depletion layer becomes higher, and the total turn-off time is shorter.Therefore, a more favorable trade-off between dynamic turn-off energy loss and forward conduction voltage drop is obtained in n-IGBT.However, the turn-off voltage change rate(dv/dt) and current change rate(di/dt) values in n-IGBT are high, especially after the punch-through phenomenon occurs.Thus, attention should be paid to the device design technology of n-IGBT electromagnetic interference(EMI) suppression.

关 键 词：SiC IGBT 短路安全工作区(SCSOA) 反向偏置安全工作区(RBSOA) 能量损耗 

分 类 号：TN322.8[电子电信—物理电子学]