Strain-engineered N-polar InGaN nanowires:towards high-efficiency red LEDs on the micrometer scale  

作　　者：A.PANDEY J.MIN Y.MALHOTRA M.REDDEPPA Y.XIAO Y.WU Z.MI 

机构地区：[1]Department of Electrical Engineering and Computer Science,University of Michigan,Ann Arbor,Michigan 48109,USA

出　　处：《Photonics Research》2022年第12期2809-2815,共7页光子学研究（英文版）

基　　金：NS Nanotech,Inc.

摘　　要：The absence of efficient red-emitting micrometer-scale light emitting diodes(LEDs),i.e.,LEDs with lateral dimensions of 1μm or less is a major barrier to the adoption of microLEDs in virtual/augmented reality.The underlying challenges include the presence of extensive defects and dislocations for indium-rich InGaN quantum wells,strain-induced quantum-confined Stark effect,and etch-induced surface damage during the fabrication of quantum well microLEDs.Here,we demonstrate a new approach to achieve strong red emission(>620 nm)from dislocation-free N-polar InGaN/GaN nanowires that included an InGaN/GaN short-period superlattice underneath the active region to relax strain and incorporate more indium within the InGaN dot active region.The resulting submicrometer-scale devices show red electroluminescence dominantly from an InGaN dot active region at low-to-moderate injection currents.A peak external quantum efficiency and a wall-plug efficiency of 2.2%and1.7%were measured,respectively,which,to the best of our knowledge,are the highest values reported for a submicrometer-scale red LED.This study offers a new path to overcome the efficiency bottleneck of red-emitting microLEDs for a broad range of applications including mobile displays,wearable electronics,biomedical sensing,ultrahigh speed optical interconnect,and virtual/augmented reality.

关 键 词：QUANTUM NANOWIRES POLAR 

分 类 号：TN312.8[电子电信—物理电子学]