Transport property of topological crystalline insulator SnTe(100)and ferrimagnetic insulator heterostructures  

作　　者：Anqi Zhang Daheng Liu Teng Yang Song Ma Zhidong Zhang 

机构地区：[1]Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang 110016,China [2]School of Materials Science and Engineering,University of Science and Technology of China,Shenyang 110016,China

出　　处：《Journal of Materials Science & Technology》2022年第36期204-211,共8页材料科学技术（英文版）

基　　金：financially supported by the National Natural Science Foundation of China(Nos.52071324,51871219,and 52031014);the National Key R&D Program of China(No.2017YFA0206301)。

摘　　要：Topological crystalline insulator(TCI)SnTe is a potential material for quantum electronic devices because of its attractive inherent sensitivity of band topology and highly mobile characteristic of Dirac fermions.The proximity effect at the interface of SnTe film can affect the topological surface transport and may result in novel quantum magneto-electric effects.Here,we study the magnetoelectrical transport properties of SnTe thin films grown on ferrimagnetic insulators Eu_3Fe_5O_(12)(110)(EuIG(110))and Y_(3)Fe_(5)O_(12)(111)(YIG(111))single-crystal underlayers by molecular beam epitaxy.Linear magnetic resistance(LMR)is observed in SnTe/Eu IG heterostructures in the low field range,which is different from the weak antilocalization(WAL)characteristic of SnTe/YIG heterostructures.Especially,the double carrier characteristic with the coexistence of holes and electrons in SnTe/Eu IG heterostructure is quite different from the holes as main carriers in SnTe/YIG,although the SnTe layer remains the same crystal plane(100)in the two heterostructures.The LMR in SnTe/Eu IG is attributed to the topological surface Dirac electrons and disordered domain distribution in the SnTe layer which is in sharp contrast to the WAL of SnTe/YIG with ordered domain distribution in the SnTe layer.The present studies of transport properties not only provide a fundamental understanding of the transport mechanism of TCI and magnetite insulator heterostructure but also display the promising application probability for tunable topological electronic devices.

关 键 词：Topological crystalline insulator Ferrimagnetic insulators Linear magnetoresistance Electrical transport Molecular beam epitaxy 

分 类 号：TB34[一般工业技术—材料科学与工程] O469[理学—凝聚态物理]