全屏蔽硅基腔体MEMS双工器  

Fully Shielded Silicon Based Cavity MEMS Duplexer

作　　者：祁飞[1] 李志东 汪蔚[1] Qi Fei;Li Zhidong;Wang Wei(The 13^(th)Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2023年第1期102-107,共6页Micronanoelectronic Technology

摘　　要：基于三维高精度微电子机械系统(MEMS)加工工艺,研究了一种全屏蔽硅基腔体MEMS双工器的设计及制备方案。简要分析了关于平行耦合线滤波器的相关设计原理,采用λ/4平行耦合线设计两通道滤波器,结合T型匹配网络实现双工器的设计。该双工器以双层高阻硅片作为衬底材料,采用MEMS工艺制备接地通孔,以提高双工器的隔离度及电磁兼容特性。设计的双工器发射通道工作频率为9~10 GHz,接收通道工作频率为11~12 GHz,最终制备出尺寸为7 mm×7 mm的双层硅基双工器,发射及接收通道的回波损耗≤-18 dB,两个通道之间的隔离度约为-30 dB。测试结果与仿真结果吻合较好,为硅基MEMS微系统的集成设计提供技术支撑。A designed and fabricated scheme of a fully shielded silicon based cavity micro-electromechanical system(MEMS) duplexer was studied by the 3D high accuracy MEMS processing technology. The relative design principle of the parallel coupling line filter was briefly analyzed. Combined with the T-shape matching net, the designed duplexer was achieved with a two-channel filter designed by λ/4 parallel coupling line. The double-layer silicon wafer with high resistance was used as the substrate material of the duplexer, and the grounding through hole was prepared by the MEMS process to improve the isolation and electromagnetic compatibility of the duplexer. The transmit channel and receive channel of the designed duplexer are at the working frequency of 9-10 GHz and 11-12 GHz, respectively. The size of the prepared double-layer silicon based duplexer is 7 mm×7 mm, the return losses of the transmit and receive channels are ≤-18 dB,and the isolation between two channels is about-30 dB. The test result is agreed well with the simulation result, which provides technical support for integrated design of the silicon based MEMS microsystem.

关 键 词：微电子机械系统(MEMS) 硅 双工器 平行耦合线 隔离度 

分 类 号：TN713.1[电子电信—电路与系统] TH703[机械工程—仪器科学与技术]