金刚石纳米锥坑阵列结构的制备  

Preparation of Diamond Nano-Cone Pit Array Structure

作　　者：谭心[1] 潘超 贺占清 祁晖[1] 杨桥 Tan Xin;Pan Chao;He Zhanqing;Qi Hui;Yang Qiao(College of Mechanical Engineering,Inner Mongolia University of Science&Technology,Baotou 014010,China)

机构地区：[1]内蒙古科技大学机械工程学院,内蒙古包头014010

出　　处：《微纳电子技术》2023年第1期116-123,共8页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(61765012);内蒙古自然科学基金资助项目(2019MS05008);国家重点研发计划资助项目(2017YFF0207200,2017YFF0207203);内蒙古自治区科技创新指导项目(2017CXYD-2,KCBJ2018031);内蒙古科技大学青年基金项目(202/0303022006)。

摘　　要：采用电感耦合反应离子刻蚀(ICP-RIE)技术刻蚀金刚石薄膜,通过调整刻蚀功率、角度及时间等工艺参数,低成本且高效率地实现了排列整齐的圆形纳米锥坑阵列的可控化制备。对纳米锥坑的制备过程进行深入研究,发现可通过调节刻蚀角度与偏压功率控制氧等离子对金刚石进行高度方向性的刻蚀。荧光检测结果表明,直径为80~120 nm、深度为90~130 nm的纳米锥坑阵列结构可使金刚石薄膜内NV0色心的荧光强度增加21%,SiV-色心的荧光强度增加49%。使用时域有限差分方法对增强原因进行探究,发现纳米锥坑对泵浦激发光有局限作用,并且可在纳米锥坑附近形成法布里-珀罗共振腔,使色心的自发辐射速率加快,进而增加其荧光强度。The diamond film was etched by inductively coupled reactive ion etching(ICP-RIE) technology. By adjusting the process parameters such as etching power, angle and time, the controllable preparation of a neatly arranged circular nano-cone pit array was realized at low cost and high efficiency. Through in-depth research on the preparation process of nano-cone pits, it is found that the diamond can be etched highly directionally by adjusting the etching angle and bias power to control the oxygen plasma. The fluorescence detection results show that the nano-cone pit array structure with a diameter of 80-120 nm and a depth of 90-130 nm can increase the fluorescence intensity of the NV~0 color center in the diamond film by 21%, and increase the fluorescence intensity of the SiV-color center by 49%. Using the finite difference time domain method to explore the reason for the enhancement, it is found that the nano-cone pit has a limited effect on the pump excitation light, and a Fabry-Perot resonant cavity can be formed near the nano-cone pit, which accelerates the spontaneous emission rate of the color center, thereby increasing its fluorescence intensity.

关 键 词：纳米锥坑 金刚石薄膜 电感耦合反应离子刻蚀(ICP-RIE) 刻蚀方向性 荧光增强 

分 类 号：TN305.7[电子电信—物理电子学]