石英晶片化学机械抛光工艺优化  

Process Optimization of Chemical Mechanical Polishing for Quartz Wafers

作　　者：贾玙璠 朱祥龙[1,2] 董志刚 康仁科[1,2] 杨垒 高尚[1,2] Jia Yufan;Zhu Xianglong;Dong Zhigang;Kang Renke;Yang Lei;Gao Shang(Key Laboratory for Precision and Non-Traditional Machining Technology of Ministry of Education,Dalian University of Technology,Dalian 116024,China;Faculty of Mechanical Engineering Materials and Energy,Dalian University of Technology,Dalian 116024,China)

机构地区：[1]大连理工大学精密与特种加工教育部重点实验室,辽宁大连116024 [2]大连理工大学机械工程与材料能源学部,辽宁大连116024

出　　处：《微纳电子技术》2023年第1期159-164,共6页Micronanoelectronic Technology

摘　　要：为同时优化化学机械抛光(CMP)后石英晶片平面度和表面粗糙度,进行化学机械抛光协调控制实验。分析了抛光时间、抛光转速和抛光压力对石英晶片平面度和表面粗糙度的影响,确定了最佳工艺参数。研究结果表明:石英晶片平面度和表面粗糙度都随抛光时间延长而优化,在150 min时,平面度和表面粗糙度都能达到稳定。抛光时间为150 min、抛光盘转速为50 r/min、抛光压力为53.5 N时,能使晶片同时得到较好的平面度和表面粗糙度,此时平面度为2.03μm,表面粗糙度为0.68 nm。To improve the flatness and surface roughness of quartz wafers at the same time after chemical mechanical polishing(CMP), coordinated control experiment of CMP was carried out. Effects of polishing time, polishing rotation speed and polishing pressure on the flatness and surface roughness of quartz wafers were analyzed, and the optimum process parameters were determined. The research results show that the flatness and surface roughness are optimized with the polishing time, and the flatness and surface roughness are stable at 150 min. A wafer with good flatness and surface roughness can be obtained when the polishing time is 150 min, the polishing disk rotational speed is 50 r/min, and the polishing pressure is 53.5 N. Besides, the flatness is 2.03 μm, and the surface roughness is 0.68 nm.

关 键 词：石英晶片 化学机械抛光(CMP) 表面粗糙度 平面度 工艺优化 

分 类 号：TN305.2[电子电信—物理电子学]