CMP工艺晶圆表面颗粒去除问题的研究  

Study on Particle Removal of Wafer Surface in CMP Process

作　　者：李岩 于静 戴豪 钱震坤 LI Yan;YU Jing;DAI Hao;QIAN Zhenkun(GEGV Technology Co.,Ltd.,Beijing 100176,China)

机构地区：[1]北京晶亦精微科技股份有限公司,北京100176

出　　处：《电子工业专用设备》2023年第1期28-30,64,共4页Equipment for Electronic Products Manufacturing

摘　　要：CMP之后晶圆表面颗粒数目是CMP工艺的一项关键指标。针对Si CMP之后的清洗效果,分析了晶圆表面亲疏水性、清洗液浓度方面对清洗效果的影响。结果表明通过一定浓度的清洗液清洗抛光之后晶圆能取得较好的表面颗粒数量,满足工艺需求。The particle count of CMP post clean is a key point in CMP process. in this process,the cleaning effect after CMP is tested and analyzed. The effects of hydrophilicity and hydrophobicity of wafer surface and concentration of cleaning liquid on cleaning effect are analyzed. The results show that after cleaning and polishing with a certain concentration of cleaning liquid,the wafer can obtain a better surface particle condition and meet the process requirements.

关 键 词：化学机械平坦化(CMP) 清洗液 颗粒度 

分 类 号：TN305.97[电子电信—物理电子学]