一种无片外电容高瞬态响应LDO设计  

An Output-Capacitorless Low-Dropout Regulator with Fast Transient Response

作　　者：陈俊杰[1] 袁磊 陈子杰 王少昊 CHEN Jun-jie;YUAN Lei;CHEN Zi-jie;WANG Shao-hao(FZU-Jinjiang Joint Institute of Microelectronics,Fuzhou University)

机构地区：[1]福州大学-晋江微电子研究院

出　　处：《中国集成电路》2023年第3期26-30,64,共6页China lntegrated Circuit

基　　金：国家重点研发计划(2018YFB0407603)。

摘　　要：针对SoC中电源管理模块对高功能-面积比和高瞬态响应的需求,本文提出一种基于翻转电压跟随器(FVF)的无片外电容低压差线性稳压器(LDO),采用电压峰值检测技术实现动态电流偏置,进而提升系统瞬态响应。基于SMIC 40nm工艺的仿真结果表明,在典型负载切换状态下,提出方案的下冲和上冲恢复时间相比传统的FVF结构LDO电路分别缩短了75%和29%。According to the need of the high functional area ratio and the fast transient response of the power management blocks in System-on-Chips, we proposed an output-capacitorless low-dropout regulator(LDO)based on a flipped voltage follower(FVF), which uses a voltage peak detection technology to dynamically bias the current and boost the transient response speed. By using the SMIC 40nm process in the simulation, the results indicate that in the typical loading switching cases, the proposed LDO scheme can shorten both the undershoot and overshoot recovery times which are reduced by 75% and 29% from the traditional FVF-based LDO schemes, respectively.

关 键 词：翻转电压跟随器 线性稳压器 无片外电容LDO 高瞬态响应 

分 类 号：TM44[电气工程—电器]