高输出功率高线性度5G毫米波功率放大器研究与设计  

Research and Design of 5G Millimeter Wave Power Amplifier with High Output Power and High Linearity

作　　者：王喜瑜[2,3] 刘新阳 欧阳可青 胡劼 陆敏 陈志林 马宵宵 WANG Xi-yu;LIU Xin-yang;OUYANG Ke-qing;HU Jie;LU Min;CHEN Zhi-lin;MA Xiao-xiao(State Key Lavoratory of Mobile Network and Mobile Multimedia Technology;ZTE Corparation;Sanechips Technology Co.,Ltd.)

机构地区：[1]移动网络和移动多媒体技术国家重点实验室 [2]中兴通讯股份有限公司 [3]深圳市中兴微电子技术有限公司

出　　处：《中国集成电路》2023年第3期58-64,共7页China lntegrated Circuit

摘　　要：本文针对5G毫米波功率放大器(Power amplifier, PA)高输出功率和高线性度的需求,对PA功率和线性度受限机理进行了深入分析。在此基础上,提出了一种采用峰化电感技术和两路合成结构提升输出功率,以及采用PMOS补偿电容、二阶谐波和低阻抗网络来改善宽带调制下线性度的PA电路。基于5G毫米波26GHz频段应用,该PA采用65nm CMOS SOI工艺进行实现。测试结果表明,该PA在26GHz,实现了20.8dBm的OP1dB和21.3dBm的Psat,峰值PAE为26.15%。在调制信号测试中,使用5G NR 400 MHz 1-CC 64-QAM和256-QAM OFDM信号,该PA支持5%和3%的均方根误差矢量幅度(EVM),和实现平均输出功率(Pavg)分别为15.5dBm和14.4dBm。To meet the requirements of high output power and high linearity of 5G millimeter wave(mm W)power amplifier(PA), the limitation mechanism of power and linearity for PA design is deeply analyzed. On this basis, a PA design using peaking inductance technology and two way synthesis structure to improve the output power, and a PMOS compensation capacitor, second harmonic and low impedance network to improve linearity for the broadband modulation is proposed. Based on the application of 5G mm W 26GHz frequency band, the PA is realized by 65nm CMOS SOI process. The measurement results show that the PA achieves OP1dB of 20.8dBm and Psat of 21.3dBm,and the peak PAE of 26.15% at 26GHz. In the modulation signal test, 5G NR 400 MHz 1-CC 64-QAM and256-QAM OFDM signals are used. The PA supports 5% and 3% rms error vector amplitude(EVM), and the average output power(Pavg)is 15.5dBm and 14.4dBm for 64-QAM and 256-QAM, respectively.

关 键 词：毫米波(mmW) 26GHz 第五代(5G) 新型无线电(NR) 功率放大器(PA) 256-QAM 线性度 

分 类 号：TN722.75[电子电信—电路与系统] TN929.5