菊花链Cu/Cu_(3) Sn/Cu互连凸点电迁移仿真研究  

Simulation of micro bump electromigration in daisy-chain Cu/Cu_(3)Sn/Cu interconnects

作　　者：李雪茹 王俊强 侯文[1] LI Xueru;WANG Junqiang;HOU Wen(School of Information and Communication Engineering,North University of China,Taiyuan 030051,China;Academy for Advanced Interdisciplinary Research,North University of China,Taiyuan 030051,China)

机构地区：[1]中北大学信息与通信工程学院,山西太原030051 [2]中北大学前沿交叉科学研究院,山西太原030051

出　　处：《电子元件与材料》2023年第2期246-252,共7页Electronic Components And Materials

基　　金：国防科技173计划技术领域基金项目(2020JCJQZD043)。

摘　　要：多物理场耦合作用下产生的电迁移现象成为影响键合结构可靠性的关键问题。建立了菊花链键合封装结构的三维有限元模型,研究了电-热-力交互作用下键合结构的温度分布、电流密度分布及应力分布。发现在连接线与凸点相连的位置容易发生电流聚集效应,从而导致此处出现温度升高及热应力增大的现象。此外,仿真分析了2~12 mV输入电压和20~100μm凸点间距对键合结构的电迁移失效的影响。发现对于20μm间距的凸点,输入电压超过8 mV时会发生电迁移失效。对于间距超过40μm的凸点,输入电压超过4 mV时会发生电迁移失效。结果表明,20μm间距的凸点电迁移可靠性高,为凸点结构设计及电迁移的实验研究提供了参考。The electromigration phenomenon under the coupling of multiple physical fields has become a key problem that affects the reliability of bond structures.A three-dimensional finite element model was established for daisy-chain bond packaging structure.The temperature distribution,current density distribution and stress distribution were studied for the bond structure under the electric-thermo-mechanical interaction.It is found that the current aggregation effect can easily occur at the connection between the aluminum interconnect and the bumps,which leads to the rise of temperature and thermal stress.In addition,electromigration failure of bond structures were simulated and analyzed at 2-12 mV input voltage and 20-100μm bump pitch.It is found that at a 20-μm-pitch bump an electromigration failure happens at input voltage larger than 8 mV.To bumps with pitch over 40μm,an electromigration failure happens when the input voltage is larger than 4 mV.The results show that the 20-μm-pitch bump has high reliability,which provides a reference for the design of bump structure and experimental study of electromigration.

关 键 词：电迁移失效 多物理场耦合 菊花链结构 有限元分析 可靠性 电流密度 

分 类 号：TN604[电子电信—电路与系统] TN403