聚焦离子束在二维多孔Si/Al_(2)O_(3)/SiC薄膜透射电镜截面微观结构表征中的应用  

Application of focused ion beam technique in the microstructure characterization of transmission electron microscope cross section of two-dimensional porous Si/Al_(2)O_(3)/SiC film

作　　者：陶伟杰 刘灿辉 陶莹雪 贺振华 Tao Weijie;Liu Canhui;Tao Yingxue;He Zhenhua(School of Information Engineering,Wuhan University of Technology,Wuhan 430070)

机构地区：[1]武汉理工大学信息工程学院,武汉430070

出　　处：《化工新型材料》2023年第2期155-158,共4页New Chemical Materials

基　　金：国家自然科学基金(11747133);中央高校基本科研业务费专项资金(195209019)。

摘　　要：二维多孔Si/Al_(2)O_(3)/SiC薄膜材料的透射电镜截面微观结构表征中,存在薄膜易脱落、脆性大、耐磨性差,以及选区制备难度大、制样效率低、成功率低等问题。采用聚焦离子束技术,成功地进行了二维多孔Si/Al_(2)O_(3)/SiC薄膜的透射电镜截面微观形貌的表征。结果表明,聚焦离子束技术是一种可以有效减少二维多孔薄膜样品制备过程中的损伤,进行高质量进行透射电镜截面微观结构表征的方法。There are lots of issues in the microstructure characterization of transmission electron microscope(TEM) cross section of two-dimensional porous Si/Al_(2)O_(3)/SiC film, such as film falling off easily, high brittleness, poor wear resistance, difficult preparation of selected area, low sample preparation efficiency and rate of success, etc.In this research, the characterization of porous Si/Al_(2)O_(3)/SiC film cross section was successfully carried out by focused ion beam(FIB).The results showed that the FIB technique was a method to characterize the TEM cross section of two-dimensional porous film with high-quality and effectively reduce the damages during preparation of TEM sample.

关 键 词：二维多孔Si/Al_(2)O_(3)/SiC薄膜 聚焦离子束 透射电镜 截面样品 微观结构 

分 类 号：TB34[一般工业技术—材料科学与工程]