高软磁低电导率Fe-Fe_(3)N薄膜的N原子含量调控  

Control of N atom content in Fe-Fe_(3)N film with high saturation magnetization and low conductivity

作　　者：陈震 兰明迪 李国建[1] 孙尚 刘诗莹 王强[1] Chen Zhen;Lan Ming-Di;Li Guo-Jian;Sun Shang;Liu Shi-Ying;Wang Qiang(Key Laboratory of Electromagnetic Processing of Materials(Ministry of Education),Northeastern University,Shenyang 110819,China;State Key Laboratory of Rolling Technology and Continuous Rolling Automation,Northeastern University,Shenyang 110819,China;School of Metallurgy,Northeastern University,Shenyang 110819,China;School of Materials Science and Engineering,Northeastern University,Shenyang 110819,China;School of Materials Science and Engineering,Shenyang University of Technology,Shenyang 110870,China)

机构地区：[1]东北大学材料电磁过程研究教育部重点实验室,沈阳110819 [2]东北大学轧制技术及连轧自动化国家重点实验室,沈阳110819 [3]东北大学冶金学院,沈阳110819 [4]东北大学材料科学与工程学院,沈阳110819 [5]沈阳工业大学材料科学与工程学院,沈阳110870

出　　处：《物理学报》2023年第6期276-285,共10页Acta Physica Sinica

基　　金：国家重点研发计划(批准号:2021YFA1600204)资助的课题.

摘　　要：微电子器件具有广泛的应用前景,为了使微电子器件具有优良的高频特性,同时具有高饱和磁化强度、低矫顽力以及高电阻率软磁薄膜的研发成为其中的关键.本文采用射频原子源辅助真空热蒸发方法制备了不同N原子含量的Fe-Fe_(3)N软磁薄膜.高饱和磁化强度Fe_(3)N相含量和(102)取向度的增大,使薄膜的饱和磁化强度增大,相比于Fe薄膜,饱和磁化强度提高了55.2%,达到1705.6 emu/cm^(3)(1 emu/cm^(3)=10^(3)A/m).此外,Fe_(3)N(102)取向度的增大会产生较大的晶格错配,阻碍Fe和Fe_(3)N晶粒的生长,使薄膜晶粒尺寸降低,矫顽力(50.3 Oe(1 Oe=10^(3)/(4π)A/m))比Fe薄膜降低了68.6%.同时,较大的晶格错配也会促进载流子散射,提高了Fe-Fe_(3)N薄膜电阻率,使得其电阻率(8.80μΩ·m)比Fe薄膜增大了7倍.因此,本文为高饱和磁化强度、低矫顽力以及高电阻率软磁薄膜的研发提供了新方法.Microelectronic devices have a wide range of application prospects.In order to make microelectronic devices that have excellent high-frequency characteristics,developing of soft magnetic films with high saturation magnetization,low coercivity and high resistivity becomes the key to the research.In this work,Fe-Fe_(3)N soft magnetic films with different numbers of N atoms are prepared by radio-frequency atomic source assisted vacuum thermal evaporation.Among them,the RF atom source provides N atoms with higher chemical activity than N molecules,which reduces the formation energy between Fe atoms and N atoms.The vacuum thermal evaporation is beneficial to accurately controlling the growth rate,impurity concentration and composition ratio of multiple compounds of the film at the atomic level.The combination of the two Fe aom and N atom is easier to form nitrides with Fe atoms.Thus in this way the Fe-N films with stable structure are obtained.In the prepared Fe-Fe_(3)N soft magnetic film,the introduction of N atoms makes the surface of the film more uniform,resulting in the increase of density.Compared with Fe,surface roughness is reduced by two times,and the crystallinity is obviously enhanced.Owing to the high saturation magnetization,the content of Fe_(3)N phase is increased by 29% and the(102)orientation of Fe_(3)N increases to 0.64.Therefore the directionality of the magnetic moment arrangement is improved.Comparing with Fe film,the saturation magnetization of the film is increased by 55.2%,reaching 1705.6 emu/cm3.In addition,with the increase of the(102)orientation of Fe_(3)N,a large number of lattice mismatches are produced,which impedes the growth of Fe and Fe_(3)N grains and reduces the grain size and anisotropy of the film.Thus the coercivity of the film decreases.The coercivity(50.3 Oe)is 68.6%lower than that of the Fe film.At the same time,the larger lattice mismatch results in the increase of heterointerface,which promotes the carrier scattering and increases the resistivity of Fe-Fe_(3)N thin film.The r

关 键 词：磁性薄膜 Fe-Fe_(3)N 真空热蒸发 射频原子源 

分 类 号：TB383.2[一般工业技术—材料科学与工程]