考虑小尺寸效应的Micro-LED驱动结构设计  

Design of Micro-LED Driving Structure Considering Small Size Effect

作　　者：殷录桥[1,2] 张雪松 任开琳 张楠 郝茂盛 李春亚[2] 张建华[1,2] Yin Luqiao;Zhang Xuesong;Ren Kailin;Zhang Nan;Hao Maosheng;Li Chunya;Zhang Jianhua(Department of Microelectronics,Shanghai University,Shanghai 200444,China;Key Laboratory of Advanced Display and System Application,Ministry of Education,Shanghai University,Shanghai 200072,China;Shanghai Chip Foundation Co.,Ltd.,Shanghai 201601,China)

机构地区：[1]上海大学微电子学院,上海200444 [2]上海大学新型显示技术及应用集成教育部重点实验室,上海200072 [3]上海芯元基半导体科技有限公司,上海201601

出　　处：《光学学报》2023年第2期202-217,共16页Acta Optica Sinica

基　　金：上海市2021年度科技创新行动计划高新技术领域项目(21511101302,20010500100)。

摘　　要：设计一款芯片尺寸为300μm的蓝绿光微型发光二极管(Micro-LED)并将其点亮,通过TCAD仿真对芯片尺寸为10、38、100、300μm的Micro-LED进行模拟仿真,探究了Micro-LED的小尺寸效应,发现随着Micro-LED尺寸的减小,开关损耗增加。因此,针对提高小尺寸Micro-LED单点像素的驱动电流密度过程中产生的开关损耗增加的问题,模拟仿真驱动电路驱动Micro-LED的开关特性过程,进行减小开关损耗的研究。利用Sentaurus TCAD软件进行仿真,设计了一台沟道长度为0.18μm的p型金属氧化物半导体场效应晶体管(PMOS)器件,将PMOS器件和Micro-LED器件通过铟凸点进行键合,并对PMOS驱动电路驱动单独Micro-LED像素进行仿真,进一步进行PMOS驱动两个Micro-LED像素的仿真,从而模拟阵列像素驱动的情况,通过比较开关延迟时间判断驱动效果并进行实验验证,发现当PMOS接入限流电阻驱动Micro-LED时,阻值越小,驱动效果越好,而且起到消除浪涌、限流分压的作用,但PMOS直接驱动Micro-LED比加入限流电阻的效果更好,PMOS驱动阵列Micro-LED相比于驱动单独Micro-LED开关损耗更小、驱动效果更好。Objective Micro light emitting diode(Micro-LED)is a kind of self-emitting device,and its single pixel can produce high brightness,which can realize the control of each pixel and single-point light driving.It has a very broad application prospect.Micro-LED display surpasses the current mainstream liquid crystal display(LCD)and organic light-emitting diode(OLED)display in terms of power consumption,resolution,contrast,and lifetime,which represents significant progress in the display field.However,the application of Micro-LED still faces challenges such as small size effect,chip and backplane technology,and bonding and driving technology.In this research,we use simulation software to design the structure parameters of Micro-LEDs and light them up,design the PMOS driving backplane,explore the small-size effect of Micro-LEDs,and study how to optimize the driving to improve the small-size effect of Micro-LEDs.We hope that our research will help overcome the current challenges faced by Micro-LEDs and realize the large-scale use of Micro-LEDs as soon as possible.Methods In this paper,the optimization of driving is studied to improve the small size effect of Micro-LEDs.Firstly,the structure and parameters of Micro-LEDs of 10μm,38μm,100μm,and 300μm are modeled by the simulation software of Sentaurus TCAD,and the small-size effect of Micro-LEDs is explored through the change in Micro-LED switching loss caused by the change in radiation recombination rate and light-emitting efficiency under small size,and the Micro-LED of 300μm blue-green light is lit.Next,a PMOS device of 0.18μm is designed as the driving backplane through Sentaurus simulation,and the PMOS device and Micro-LED device are bonded through indium bumps.Then,the simulation of PMOS driving circuit driving a single Micro-LED,the simulation of PMOS plus current-limiting resistors with different resistance values driving a single Micro-LED,and the simulation of PMOS driving two Micro-LED pixels are carried out to simulate the driving of array pixels.Finally,th

关 键 词：光学器件 微型发光二极管 小尺寸效应 PMOS驱动 开关延迟时间 

分 类 号：TN312.8[电子电信—物理电子学] TN386.1