Demonstration and operation of quantum harmonic oscillators in an AlGaAs–GaAs heterostructure  

作　　者：Guangqiang Mei Pengfei Suo Li Mao Min Feng Limin Cao 

机构地区：[1]School of Physics and Technology,Center for Nanoscience and Nanotechnology,and Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education,Wuhan University,Wuhan 430072,China

出　　处：《Frontiers of physics》2023年第1期63-69,共7页物理学前沿（英文版）

基　　金：Profs.Y.Zhang,J.Chen,J.Zhao,and C.Lin are greatly appreciated.M.Feng thanks financial support from the National Key R&D Program of China(Grant No.2018YFA0305802);the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XD30000000);the National Natural Science Foundation of China(Grant Nos.11574364 and 11774267);L.Mao thanks financial support from the National Key R&D Program of China by the Ministry of Science and Technology of China(Grant No.2015C8932400).

摘　　要：The quantum harmonic oscillator(QHO),one of the most important and ubiquitous model systems in quantum mechanics,features equally spaced energy levels or eigenstates.Here we present a new class of nearly ideal QHOs formed by hydrogenic substitutional dopants in an AlGaAs/GaAs heterostructure.On the basis of model calculations,we demonstrate that,when aδ-doping Si donor substitutes the Ga/Al lattice site close to AlGaAs/GaAs heterointerface,a hydrogenic Si QHO,characterized by a restoring Coulomb force producing square law harmonic potential,is formed.This gives rise to QHO states with energy spacing of~8–9 meV.We experimentally confirm this proposal by utilizing gate tuning and measuring QHO states using an aluminum single-electron transistor(SET).A sharp and fast oscillation with period of~7–8 mV appears in addition to the regular Coulomb blockade(CB)oscillation with much larger period,for positive gate biases above 0.5 V.The observation of fast oscillation and its behavior is quantitatively consistent with our theoretical result,manifesting the harmonic motion of electrons from the QHO.Our results might establish a general principle to design,construct and manipulate QHOs in semiconductor heterostructures,opening future possibilities for their quantum applications.

关 键 词：quantum harmonic oscillator AlGaAs/GaAs semiconductor heterostructure single-electron transistor gate tuning 

分 类 号：TB34[一般工业技术—材料科学与工程]