二氧化钒金属-绝缘相变的回线宽度及其调控研究进展  

Research Progress on the Hysteresis Width and Its Modulation of Metal-Insulator Phase Transition of Vanadium Dioxide

作　　者：张化福 周爱萍 吴志明 蒋亚东 ZHANG Huafu;ZHOU Aiping;WU Zhiming;JIANG Yadong(School of Physics and Optoelectronic Engineering,Shandong University of Technology,Zibo 255049,Shandong,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,School of Optoelectronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China)

机构地区：[1]山东理工大学物理与光电工程学院,山东淄博255049 [2]电子科技大学光电科学与工程学院,电子薄膜与集成器件国家重点实验,成都610054

出　　处：《材料导报》2023年第6期173-182,共10页Materials Reports

基　　金：国家自然科学基金重点项目(61235006)。

摘　　要：优异的金属-绝缘相变性能使得二氧化钒(VO_(2))具有广阔的应用前景。回线宽度是影响VO_(2)实际应用的一个重要指标,不同类型的器件对回线宽度的要求不同。传感类器件要求VO_(2)的回线宽度要尽量小,而存储类器件则要求VO_(2)具有较大的回线宽度。为了满足不同器件的应用要求,研究人员已通过磁控溅射法、溶胶-凝胶法、聚合物辅助沉积法和脉冲激光沉积法等方法制备了VO_(2),并对其回线宽度进行了研究。本文先从形貌(颗粒大小、颗粒形状和晶界)、元素掺杂和择优取向三个方面对回线宽度的研究进行了总结;然后,对二氧化钒回线宽度的调控机理进行了讨论;最后,指出当前研究中的不足,并对将来的工作进行了展望。Vanadium dioxide(VO_(2))has potential applications in many fields due to its excellent metal-insulator phase transition.The hysteresis width plays an important role in practical applications owing to the fact that different devices require different hysteresis width.For sensor-type devices,a smaller hysteresis width is required in order to run these devices reliably and efficiently.However,for storage-type devices,a relatively larger hysteresis width is required.In order to meet the needs of the different devices,VO_(2)has been prepared by magnetron sputtering,sol-gel,polymer-assisted deposition and pulsed laser deposition,and great efforts have been made to investigate the hysteresis width.This article systematically reviews the recent research progress in regulating the hysteresis width of VO_(2).Firstly,the influence of the surface morphology(grain size,grain shape and grain boundaries),element doping and preferential orientation on the hysteresis width is summarized.Then,the modulation mechanism of the hysteresis width is discussed.Finally,suggestions as well as perspectives for the future are provided.

关 键 词：回线宽度 二氧化钒 金属-绝缘相变 薄膜 智能窗 光电开关 光存储器 表面形貌 

分 类 号：TN213[电子电信—物理电子学]