分离打拿极电子倍增器性能提升技术研究  

Performance Improvement Technology of Discrete Dynode Electron Multipliers

作　　者：李洁[1] 杨济世 刘虎林[2] 刘碧野 赵源[1] 胡文波 吴胜利[1] LI Jie;YANG Ji-shi;LIU Hu-lin;LIU Bi-ye;ZHAO Yuan;HU Wen-bo;WU Sheng-li(Key Laboratory of Physical Electronics and Devices,Ministry of Education,School of Electronic Science and Engineering,Xi an Jiaotong University,Xi an 710049,China;Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology of CAS,Xi an Institute of Optics and Precision Mechanics of CAS,Xi an 710119,China;Beijing Orient Institute of Measurement and Test,Beijing 100086,China)

机构地区：[1]西安交通大学电子物理与器件教育部重点实验室电子科学与工程学院,陕西西安710049 [2]中国科学院西安光学精密机械研究所超快诊断技术重点实验室,陕西西安710119 [3]北京东方计量测试研究所,北京100086

出　　处：《真空电子技术》2023年第1期18-24,共7页Vacuum Electronics

基　　金：国家重点研发计划资助项目(2021YFF0700800,2021YFF0700600);国家自然科学基金项目(52002313,U2241207);科工局重点实验室稳定支持科研项目

摘　　要：研究了磁控溅射法制备二次电子发射薄膜过程中氩气与氧气流量比和打拿极极间分压方式对电子倍增器增益及衰减特性的影响。研究表明,采用25∶5的氩气与氧气流量比所制备的MgO/(MgO-Au)双层结构薄膜具有最大的二次电子发射系数(SEY)和最小的SEY衰减率,同时利用该薄膜制作的九级打拿极电子倍增器具有最高的增益和最小的增益衰减率,这与该薄膜拥有最大的MgO晶粒尺寸和合适的导电性密切相关;采用第九打拿极与地之间的分压电阻阻值为3 MΩ且前八级打拿极极间分压电阻阻值均为6 MΩ的打拿极极间差异化分压方式制作电子倍增器能够提高器件增益,降低器件工作电压,并减缓在电子持续轰击下的增益衰减。该研究结果对高性能分离打拿极电子倍增器研制及其应用具有重要意义。The influences of the argon/oxygen flow ratio during secondary electron emission thin film magnetron sputtering preparation and the voltage distribution mode between dynodes on the gain and degradation property of electron multipliers are investigated.The results show that the MgO/(MgO-Au)double-layer thin film prepared with the argon/oxygen flow ratio of 25∶5 has the largest secondary electron yield(SEY)and the smallest SEY degradation rate,and the nine-stage-dynode electron multiplier with this thin film has the largest gain and the smallest gain degradation rate,which is closely related to the largest MgO grain size and proper conductivity of the film.By using the resistance of 3 MΩbetween the ninth dynode and ground and the resistances of 6 MΩbetween two dynodes in first eight dynodes,the different voltage distribution mode between dynodes of the electron multiplier can improve device gain,reduce operating voltage,and slow down the gain degradation under continuous electron bombardment.The research is of great significance for the development and application of high-performance discrete dynode electron multipliers.

关 键 词：电子倍增器 二次电子发射 氩气与氧气流量比 打拿极极间分压方式 

分 类 号：TN152[电子电信—物理电子学]