温度对半导体桥电爆性能影响研究  

Effects of Temperature on the Electrical Explosion of SCB

作　　者：王成爱[1,2] 许建兵 沈云[1,2] 王悦听 沈瑞琪[1,2] 叶迎华 WANG Cheng-ai;XU Jian-bing;SHEN Yun;WANG Yue-ting;SHEN Rui-qi;YE Ying-hua(School of chemistry and chemical engineering,Nanjing University of Science and Technology,Nanjing 210094,China;Micro‑Nano Energetic Devices Key Laboratory of MIIT,Nanjing 210094,China)

机构地区：[1]南京理工大学化学与化工学院,江苏南京210094 [2]微纳含能器件工信部重点实验室,江苏南京210094

出　　处：《含能材料》2023年第3期235-242,共8页Chinese Journal of Energetic Materials

基　　金：航天进入减速与着陆技术实验室开放基金资助(EDL1909213⁃2)。

摘　　要：为了研究温度对半导体桥(SCB)电爆和点火的影响,采用电容放电激励的方式,研究了SCB在环境温度分别为25℃和-40℃的电爆特性,建立数学模型并探讨了环境温度对SCB电爆的影响;开展了以Al/CuO纳米铝热剂为点火药剂的SCB点火感度实验,在环境温度为25℃和-40℃测试了Al/CuO纳米铝热剂的点火温度,并采用Neyer D最优化法测试SCB点火感度。结果发现,当充电电压由30 V增加至50 V时,电爆延迟时间差值由0.47μs降低至0.25μs,电爆所需能量的差值由0.16 mJ增加至0.65 mJ,表明随着充电电压的增加,环境温度对电爆延迟时间的影响减小,对电爆所需能量的影响增大;并发现不同温度下Al/CuO纳米铝热剂点火温度没有显著差异,为740.7℃;-40℃时的SCB临界发火电压比25℃时高0.6 V。To investigate the effects of temperature on the electrical explosion and ignition of semiconductor bridge(SCB),the electrical explosion characteristics and ignition performance of SCB with the ambient temperature of 25℃and-40℃were studied by a capacitive discharge method,and a mathematical model was established.The ignition temperature of Al/CuO nanothermite was tested at ambient temperature of 25℃and-40℃,respectively.The ignition sensitivity of SCB was measured by the Doptimization method.When the charging voltage increases from 30 to 50V,the difference of critical initiation time reduced from 0.47 to 0.25μs.The difference of critical initiation energy increased from 0.16to 0.65 mJ.Results shown that with the increase of charging voltage,the influence of ambient temperature on the critical initiation time decreased,and the influence on the critical initiation energy increased.Both the ignition temperatures of Al/CuO nanothermite at 25℃and-40℃are 740.7℃.The 50%ignition voltage at ambient temperature of 25℃is 0.6 V lower than that at-40℃.

关 键 词：半导体桥 温度 电爆炸 点火 

分 类 号：TJ55[兵器科学与技术—军事化学与烟火技术]