Tuning nitrogen defects and doping sulfur in carbon nitride for enhanced visible light photocatalytic activity  

作　　者：Huilin Xu Xiangfeng Peng Jingxuan Zheng Zhao Wang 

机构地区：[1]National Engineering Research Center of Industry Crystallization Technology,School of Chemical Engineering and Technology,Tianjin University,Tianjin 300072,China

出　　处：《Frontiers of Chemical Science and Engineering》2023年第1期93-101,共9页化学科学与工程前沿（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.21878214 and 21938009).

摘　　要：Defect construction and heteroatom doping are effective strategies for improving photocatalytic activity of carbon nitride(g-C_(3)N_(4)).In this work,N defects were successfully prepared via cold plasma.High-energy electrons generated by plasma can produce N defects and embed sulfur atoms into g-C_(3)N_(4).The N defects obviously promoted photocatalytic degradation performance that was 7.5 times higher than that of pure g-C_(3)N_(4).The concentration of N defects can be tuned by different power and time of plasma.With the increase in N defects,the photocatalytic activity showed a volcanic trend.The g-C_(3)N_(4)with moderate concentration of N defects exhibited the highest photocatalytic activity.S-doped g-C_(3)N_(4)exhibited 11.25 times higher photocatalytic activity than pure g-C_(3)N_(4).It provided extra active sites for photocatalytic reaction and improved stability of N defects.The N vacancy-enriched and S-doped g-C_(3)N_(4)are beneficial for widening absorption edge and improving the separation efficiency of electron and holes.

关 键 词：g-C_(3)N_(4) nitrogen defect sulfur doping PHOTODEGRADATION plasma 

分 类 号：O643.36[理学—物理化学]