射频磁控溅射制备的FeN薄膜结构与磁性能  

Structure and magnetic properties of FeN thin films prepared by RF magnetron sputtering

作　　者：李晓宇 李天明[2] 蒋运石[1] 闫欢[1] 张芦[1] 张志红[1] 王梦佳 何朝雄 LI Xiao-yu;LI Tian-ming;JIANG Yun-shi;YAN Huan;ZHANG Lu;ZHANG Zhi-hong;WANG Meng-jia;HE Chao-xiong(Ninth Institute,China Electronics Technology Group Corporation,Mianyang 621000,China;School of Eletronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610051,China)

机构地区：[1]中国电子科技集团公司第九研究所,四川绵阳621000 [2]电子科技大学电子科学与工程学院,四川成都610054

出　　处：《磁性材料及器件》2023年第1期1-6,共6页Journal of Magnetic Materials and Devices

基　　金：四川省科技计划资助项目(2021YFG0015,2021YFG0019);四川省人力资源和社会保障厅博士后科研项目。

摘　　要：采用射频磁控溅射方法在单晶Si(100)基底上制备了一系列FeN薄膜样品,研究了N_(2)与Ar流量比、溅射电流、溅射压强、退火等工艺条件对FeN薄膜结构和磁性能的影响。研究表明,FeN薄膜结构与磁性能与溅射工艺参数密切相关,在气压为0.45 Pa、总流量为100 sccm的情况下,随着N_(2)与Ar流量比的增大,材料软磁性能变弱,矫顽力从24.5 Oe增大到104 Oe,并且面内磁各向异性减弱。在其他条件不变,增大溅射电流时薄膜材料厚度增加,且矫顽力也明显增大,表现出明显的旋转各向异性。对于在430℃×5 h真空退火、总流量为20 sccm、对应不同N_(2)流量比的FeN薄膜,随着N_(2)含量的增加,材料中Fe2N和Fe3N的增多,甚至在某些N_(2)流量比下薄膜呈非磁性。在Ar气和N_(2)流量比为19:1时制备出γ′-Fe_(4)N相结构的多晶薄膜。A series of FeN thin films was prepared on single crystal Si(100)substrates by radio frequency magnetron sputtering.The effects of N_(2) flow ratio,sputtering current,sputtering pressure,annealing and other process conditions on the structure and magnetic properties of FeN thin films were investigated.The research shows that the structure and magnetic properties of FeN thin films are closely related to the process parameters of RF magnetron sputtering.For gas pressure of 0.45 Pa and the total flow rate of 100 sccm,with increasing N_(2) flow r烦atio,the soft properties of the material decreases,the coercivity increases from 24.5 Oe to 104 Oe,and the in-plane magnetic anisotropy gradually weakens.When other conditions remain unchanged,the thickness of the film material increases with increasing sputtering current,and the coercivity also increases significantly,showing obvious rotational anisotropy.For FeN films annealed at 430°C for 5 h in vacuum with a total flow rate of 20 sccm but different N_(2) flow ratios,it can be found that with increasing of N_(2) flow ratio,the content ofζ-Fe2N andε-Fe3N in the material increases,even at some N_(2) flow ratio,the film exhibit non-magnetism.Polycrystalline thin films withγ′-Fe4N phase structure were prepared when the flow ratio of Ar gas and N_(2) was 19:1.

关 键 词：FeN薄膜 射频磁控溅射 工艺参数 结构 磁性能 

分 类 号：TM271.2[一般工业技术—材料科学与工程]