石墨烯/锰锌铁氧体/硅薄膜特性及其太赫兹波的磁场调制作用  

Properties of graphene/Mn-Zn ferrite/silicon thin films and modulation effects of magnetic field to terahertz wave

作　　者：魏苗清 金立川[1] 李颉[1] 张怀武[1] WEI Miao-qing;JIN Li-chuan;LI Jie;ZHANG Huai-wu(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 611731,China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都611731

出　　处：《磁性材料及器件》2023年第2期1-5,共5页Journal of Magnetic Materials and Devices

摘　　要：近年间,基于磁性薄膜的太赫兹调制器件有了初步进展。对磁控溅射锰锌铁氧体薄膜的制备工艺进行了详细研究。在此基础上,制备了石墨烯/锰锌铁氧体/硅(graphene/MnZn ferrite/Si)结构的太赫兹调制器件。其在太赫兹波段的透射可以通过源-栅电压来调制。当栅极电压V_(sg)为-25 V时,垂直膜面磁场从20 Oe增大到200 Oe,复折射率和复介电常数的实部随之增高。由于锰锌铁氧体薄膜的反常塞曼效应和各向异性磁电阻效应引起薄膜整体电导率和折射率的变化,实现了外加磁场对太赫兹波相位的调制。In recent years,terahertz modulation devices based on magnetic thin films have made preliminary progress.The preparation process of magnetron sputtering manganese-zinc ferrite thin films is studied in detail.On this basis,a graphene/MnZn ferrite/Si structure terahertz modulation device was fabricated.Its transmission in the terahertz band can be modulated by the source-gate voltage.For the gate voltage V_(sg)of 25 V,when the magnetic field vertical to film increases from 20 Oe to 200 Oe,the real part of the complex refractive index and the complex permittivity increases.Due to the change of the overall conductivity and refractive index of the film caused by the anomalous Zeeman effect and anisotropic magnetoresistance effect of the MnZn ferrite film,the phase modulation of the terahertz wave by the external magnetic field is realized.

关 键 词：锰锌铁氧体薄膜 太赫兹波 相位调制 

分 类 号：TM277.1[一般工业技术—材料科学与工程]