Quantitative measurement of the charge carrier concentration using dielectric force microscopy  

作　　者：赖君奇 陈博文 邢志伟 李雪飞 陆书龙 陈琪 陈立桅 Junqi Lai;Bowen Chen;Zhiwei Xing;Xuefei Li;Shulong Lu;Qi Chen;Liwei Chen(i-Lab,CAS Center for Excellence in Nanoscience,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China;School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China;Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China;In-situ Center for Physical Sciences,School of Chemistry and Chemical Engineering,Shanghai Jiao Tong University,Shanghai 200240,China)

机构地区：[1]i-Lab,CAS Center for Excellence in Nanoscience,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China [2]School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China [3]Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China [4]In-situ Center for Physical Sciences,School of Chemistry and Chemical Engineering,Shanghai Jiao Tong University,Shanghai 200240,China

出　　处：《Chinese Physics B》2023年第3期449-455,共7页中国物理B（英文版）

基　　金：Project supported by the National Key R&D Program of China (Grant No. 2021YFA1202802);the National Natural Science Foundation of China (Grant Nos. 21875280,21991150, 21991153, and 22022205);the CAS Project for Young Scientists in Basic Research (Grant No. YSBR-054);the Special Foundation for Carbon Peak Neutralization Technology Innovation Program of Jiangsu Province,China(Grant No. BE2022026)

摘　　要：The charge carrier concentration profile is a critical factor that determines semiconducting material properties and device performance.Dielectric force microscopy(DFM)has been previously developed to map charge carrier concentrations with nanometer-scale spatial resolution.However,it is challenging to quantitatively obtain the charge carrier concentration,since the dielectric force is also affected by the mobility.Here,we quantitative measured the charge carrier concentration at the saturation mobility regime via the rectification effect-dependent gating ratio of DFM.By measuring a series of n-type GaAs and GaN thin films with mobility in the saturation regime,we confirmed the decreased DFM-measured gating ratio with increasing electron concentration.Combined with numerical simulation to calibrate the tip–sample geometry-induced systematic error,the quantitative correlation between the DFM-measured gating ratio and the electron concentration has been established,where the extracted electron concentration presents high accuracy in the range of 4×10^(16)–1×10^(18)cm^(-3).We expect the quantitative DFM to find broad applications in characterizing the charge carrier transport properties of various semiconducting materials and devices.

关 键 词：dielectric force microscopy charge carrier concentration quantitative measurement numerical simulation 

分 类 号：TB383.2[一般工业技术—材料科学与工程] TN304[电子电信—物理电子学]