Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process  

作　　者：郭静姝 祝杰杰 刘思雨 刘捷龙 徐佳豪 陈伟伟 周雨威 赵旭 宓珉瀚 杨眉 马晓华 郝跃 Jingshu Guo;Jiejie Zhu;Siyu Liu;Jielong Liu;Jiahao Xu;Weiwei Chen;Yuwei Zhou;Xu Zhao;Minhan Mi;Mei Yang;Xiaohua Ma;Yue Hao(School of Microelectronics,Xidian University,Xi'an 710071,China;The National Key Discipline Laboratory of Wide Bandgap Semiconductor,Xidian University,Xi'an 710071,China;School of Advanced Materials and Nanotechnology,Xidian University,Xi'an 710071,China;China Academy of Space Technology(Xi'an),Xi'an 710100,China)

机构地区：[1]School of Microelectronics,Xidian University,Xi'an 710071,China [2]The National Key Discipline Laboratory of Wide Bandgap Semiconductor,Xidian University,Xi'an 710071,China [3]School of Advanced Materials and Nanotechnology,Xidian University,Xi'an 710071,China [4]China Academy of Space Technology(Xi'an),Xi'an 710100,China

出　　处：《Chinese Physics B》2023年第3期467-471,共5页中国物理B（英文版）

基　　金：the Fundamental Research Funds for the National Key Research and Development Project of China(Grant No.2020YFB1807403);the National Natural Science Foundation of China(Grant Nos.62174125 and 62131014);the Fundamental Research Funds for the Central Universities(Grant Nos.QTZX22022 and YJS2213);the Innovation Fund of Xidian University.

摘　　要：This paper studied the low-resistance ohmic contacts on InAlN/GaN with metal–organic chemical vapor deposition(MOCVD)regrowth technique.The 150-nm regrown n-InGaN exhibits a low sheet resistance of 31Ω/□,resulting in an extremely low contact resistance of 0.102Ω·mm between n^(+)-InGaN and InAlN/GaN channels.Mask-free regrowth process was also used to significantly improve the sheet resistance of InAlN/GaN with MOCVD regrown ohmic contacts.Then,the diffusion mechanism between n^(+)-InGaN and InAlN during regrowth process was investigated with electrical and structural characterizations,which could benefit the further process optimization.

关 键 词：InAlN/GaN low-resistance ohmic contacts metal–organic chemical vapor deposition(MOCVD) n^(+)-InGaN time of flight secondary ion mass spectrometry(TOF-SIMS) 

分 类 号：TN386[电子电信—物理电子学]