Atomic-scale insights of indium segregation and its suppression by GaAs insertion layer in InGaAs/AlGaAs multiple quantum wells  

作　　者：马淑芳 李磊 孔庆波 徐阳 刘青明 张帅 张西数 韩斌 仇伯仓 许并社 郝晓东 Shu-Fang Ma;Lei Li;Qing-Bo Kong;Yang Xu;Qing-Ming Liu;Shuai Zhang;Xi-Shu Zhang;Bin Han;Bo-Cang Qiu;Bing-She Xu;Xiao-Dong Hao(Materials Institute of Atomic and Molecular Science,Shaanxi University of Science and Technology,Xi'an 710021,China;School of Materials Science and Engineering,Shaanxi University of Science and Technology,Xi'an 710021,China;Key Laboratory of Interface Science and Engineering in Advanced Materials,Taiyuan University of Technology,Taiyuan 030024,China)

机构地区：[1]Materials Institute of Atomic and Molecular Science,Shaanxi University of Science and Technology,Xi'an 710021,China [2]School of Materials Science and Engineering,Shaanxi University of Science and Technology,Xi'an 710021,China [3]Key Laboratory of Interface Science and Engineering in Advanced Materials,Taiyuan University of Technology,Taiyuan 030024,China

出　　处：《Chinese Physics B》2023年第3期544-548,共5页中国物理B（英文版）

基　　金：X.H.gratefully acknowledges the financial support from the National Natural Science Foundation of China(Grant No.21902096);the Scientific Research Foundation of Shaanxi University of Science and Technology(Grant No.126061803);S.M.and B.X.thank the National Natural Science Foundation of China(Grant No.21972103);the Shanxi Provincial Key Innovative Research Team in Science and Technology(Grant No.201703D111026).

摘　　要：The In segregation and its suppression in InGaAs/AlGaAs quantum well are investigated by using high-resolution x-ray diffraction(XRD)and photoluminescence(PL),combined with the state-of-the-art aberration corrected scanning transmission electron microscopy(Cs-STEM)techniques.To facility our study,we grow two multiple quantum wells(MQWs)samples,which are almost identical except that in sample B a thin GaAs layer is inserted in each of the InGaAs well and AlGaAs barrier layer comparing to pristine InGaAs/AlGaAs MQWs(sample A).Our study indeed shows the direct evidences that In segregation occurs in the InGaAs/AlGaAs interface,and the effect of the Ga As insertion layer on suppressing the segregation of In atoms is also demonstrated on the atomic-scale.Therefore,the atomic-scale insights are provided to understand the segregation behavior of In atoms and to unravel the underlying mechanism of the effect of GaAs insertion layer on the improvement of crystallinity,interface roughness,and further an enhanced optical performance of InGaAs/AlGaAs QWs.

关 键 词：InGaAs/AlGaAs quantum well GaAs insertion layer In segregation scanning transmission electron microscopy 

分 类 号：O562[理学—原子与分子物理]