High-performance extended short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices  

作　　者：蒋俊锴 常发冉 周文广 李农 陈伟强 蒋洞微 郝宏玥 王国伟 吴东海 徐应强 牛智川 Junkai Jiang;Faran Chang;Wenguang Zhou;Nong Li;Weiqiang Chen;Dongwei Jiang;Hongyue Hao;Guowei Wang;Donghai Wu;Yingqiang Xu;Zhi-Chuan Niu(State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 101408,China;Center of Materials Science and Optoelectronics Engineering,College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 101408,China [3]Center of Materials Science and Optoelectronics Engineering,College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Chinese Physics B》2023年第3期589-593,共5页中国物理B（英文版）

基　　金：the National Key Technologies R&D Program of China(Grant Nos.2019YFA0705203 and 2018YFA0209104);Major Program of the National Natural Science Foundation of China(Grant No.61790581);Aeronautical Science Foundation of China(Grant No.20182436004).

摘　　要：High performance short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices on GaSb substrate have been demonstrated.At 300 K,the device exhibits a 50%cut-off wavelength of~2.1μm as predicted from the band structure calculation;the device responsivity peaks at 0.85 A/W,corresponding to a quantum efficiency(QE)of 56%for 2.0μm-thick absorption region.The dark current density of 1.03×10^(-3)A/cm^(2)is obtained under 50 mV applied bias.The device exhibits a saturated dark current shot noise limited specific detectivity(D*)of 3.29×1010cm·Hz^(1/2)/W(at a peak responsivity of 2.0μm)under-50 mV applied bias.

关 键 词：PHOTODETECTORS INFRARED SUPERLATTICES 

分 类 号：TN36[电子电信—物理电子学]