In_(0.83)Al_(0.17)As倍增层对In_(0.83)Ga_(0.17)As/GaAs雪崩光电探测器的特性影响  

Effect of In_(0.83)Al_(0.17)As Multiplication Layer on Characteristics of In_(0.83)Ga_(0.17)As/GaAs Avalanche Photodetector

作　　者：叶伟[1] 杜鹏飞 权贝贝 李梦飞 萧生 刘佳[1] Ye Wei;Du Pengfei;Quan Beibei;Li Mengfei;Xiao Sheng;Liu Jia(School of Mechanical Engineering,Shaanxi University of Technology,Hanzhong 723001,Shaanxi,China;Northwest Industries Group Co.,Ltd.,Xi'an 710043,Shaanxi,China)

机构地区：[1]陕西理工大学机械工程学院,陕西汉中723001 [2]西北工业集团有限公司,陕西西安710043

出　　处：《光学学报》2023年第4期1-8,共8页Acta Optica Sinica

基　　金：陕西省自然科学基础研究计划(2018JQ5138);陕西省教育厅专项科学研究计划(20JZ029)。

摘　　要：倍增层对雪崩光电探测器内部载流子的碰撞电离至关重要,因此,采用三元化合物In_(0.83)Al_(0.17)As作为倍增层材料,借助器件仿真工具Silvaco-TCAD,详细探究了In_(0.83)Ga_(0.17)As/GaAs雪崩光电探测器的倍增层厚度及掺杂浓度对其内部电场强度、电流特性和电容特性的影响规律。研究表明,随着倍增层厚度的增加,器件的电场强度和电容呈减小趋势。同时,倍增层掺杂浓度的增大会引起电容和倍增层内的电场强度峰值增加。进一步研究发现,随着倍增层厚度的增加,器件的穿通电压线性增大,击穿电压先减小后增大,但倍增层掺杂浓度的增加会引起器件击穿电压的减小。此外,用电场分布和倍增因子的结合解释了器件穿通电压与击穿电压的变化。Objective Avalanche photodetectors with inner multiplication gain have greater sensitivity than PIN photodetectors without altering the signal characteristics,which is more suitable for application in optical communication and other related fields.Among them,the separation of absorption,multiplication,and charge layer structure of InGaAs avalanche photodetectors are extensively studied.Through the reasonable design of multiplication layer structure parameters,the high electric field in the multiplication layer and low electric field in the absorption layer can be regulated by the charge layer at the same time,which results in a better multiplication effect in the multiplication layer and inhibits current generated in the absorption layer.In addition,the ternary compound In_(0.83)Al_(0.17)As has higher carrier ionization rate and electron mobility than InP,so it has greater benefits as the multiplication layer for avalanche photodetectors.However,there are few reviews on the effect of the doping concentration and thickness of the multiplication layer on the device performance.To deeply explore the variation rule of avalanche photodetectors in linear mode and elaborate on the impact of the multiplication layer parameters on the device photoelectric performance,this paper studies the doping concentration and thickness of the multiplication layer of In_(0.83)Ga_(0.17)As/GaAs avalanche photodetector in detail.It aims to explore the influence of different doping concentrations and thicknesses of the multiplication layer on the current characteristics,electric field intensity,and capacitance of the device,and research the relationship of the punch-through voltage and breakdown voltage of the device with the doping concentration and thickness of the multiplication layer.It is of great significance to discover the working mechanism of the device in linear mode.Methods In this study,the effect of the In_(0.83)Al_(0.17)As multiplication layer on the overall performance of In_(0.83)Ga_(0.17)As/GaAs avalanche photodetector is

关 键 词：探测器 雪崩光电探测器 倍增层 电场分布 穿通电压 击穿电压 

分 类 号：TN214[电子电信—物理电子学]